Naphthalenetetracarboxylic Aicd Derivatives and their Use as Semiconductors
申请人:Konemann Martin
公开号:US20080300405A1
公开(公告)日:2008-12-04
The present invention relates to naphthalenetetracarboxylic acid derivates, to a process for their preparation and to their use, especially as an n-type semiconductor.
NAPHTHALINTETRACARBONSÄUREDERIVATE UND DEREN VERWENDUNG ALS HALBLEITER
申请人:BASF SE
公开号:EP2532663A1
公开(公告)日:2012-12-12
Die vorliegende Erfindung betrifft Naphthalintetracarbonsäurederivate, ein Verfahren zu ihrer Herstellung und deren Verwendung, insbesondere als Halbleiter vom n-Typ.
本发明涉及萘四甲酸衍生物、其制备工艺及其用途,特别是用作 n 型半导体。
NAPHTHALENETETRACARBOXYLIC ACID DERIVATIVES AND THEIR USE AS SEMICONDUCTORS
申请人:Könemann Martin
公开号:US20120059168A1
公开(公告)日:2012-03-08
The present invention relates to naphthalenetetracarboxylic acid derivates, to a process for their preparation and to their use, especially as an n-type semiconductor.