A composition for film formation capable of forming a silica-based coating film having low water absorption and dielectric constant of 2.1 or lower and useful as an interlayer insulating film material in semiconductor devices, etc. The composition contains: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by formula (1), compounds represented by formula (2), and compounds represented by formula (3) in the presence of a basic catalyst and water,
RaSi(OR1)4-a (1)
wherein R represents a hydrogen atom, a fluorine atom, or a monovalent organic group, R1 represents a monovalent organic group, and a is an integer of 1 or 2,
Si(OR2)4 (2)
wherein R2 represents a monovalent organic group,
R3 b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6 c (3)
wherein R3 to R6 may be the same or different and each represents a monovalent organic group, b and c may be the same or different and each is a number of 0 to 2, R7 represents an oxygen atom, a phenylene group, or a group represented by - (CH2)n-, wherein n is an integer of 1 to 6, and d is 0 or 1; (B) a compound compatible with or dispersible in ingredient (A) and having a boiling point or decomposition temperature of from 250 to 450°C; and (C) an organic solvent.
一种用于成膜的组合物,能够形成具有低吸
水性和介电常数为 2.1 或更低的
二氧化硅基 涂膜,并可用作半导体器件等的层间绝缘膜材料。该组合物含有:(A) 至少一种
硅烷化合物,该化合物选自由式(1)、式(2)和式(3)所代表的化合物组成的组,在碱性催化剂和
水的存在下
水解和缩合得到的
水解和缩合产物、
RaSi(OR1)4-a (1)
其中 R 代表氢原子、
氟原子或一价有机基团,R1 代表一价有机基团,a 是 1 或 2 的整数、
Si(OR2)4 (2)
其中 R2 代表一价有机基团、
R3 b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6 c (3)
其中 R3 至 R6 可以相同或不同,且各自代表一价有机基团,b 和 c 可以相同或不同,且各自为 0 至 2 的数字,R7 代表氧原子、亚苯基或由 - (
CH2)n- 代表的基团,其中 n 为 1 至 6 的整数,d 为 0 或 1;(B) 与成分(A)相容或可分散于成分(A)中,且沸点或分解温度为 250 至 450°C 的化合物;以及 (C) 有机溶剂。