dodecyltrimethylammonium nitrate

• 分子结构分类: 有机化合物 - 有机氧化合物 - 有机含氧阴离子化合物
• 英文名称: dodecyltrimethylammonium nitrate
• 英文别名: DTANO3；dodecyl-trimethyl-ammonium; nitrate；Dodecyl-trimethyl-ammonium; Nitrat；dodecyl(trimethyl)azanium;nitrate
• 化学式: C₁₅H₃₄N*NO₃
• 分子量: 290.447
• InChiKey: GRUDXSAHHONUMY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.37
• 重原子数：
  20
• 可旋转键数：
  11
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  62.9
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  月桂基三甲基溴化铵 在 silver nitrate 作用下， 生成 dodecyltrimethylammonium nitrate
  参考文献：
  名称：

  Hu; Zhang; Chen, Polish Journal of Chemistry, 2009, vol. 83, # 3, p. 519 - 523

  摘要：

  DOI：
• 作为试剂：
  描述：

  苹果酸 在 sodium bromate 、 [Cu(II)(trans-5,7,7,12,14,14-hexamethyl-1,4,8,11-tetraazacyclotetradeca-4,14-diene)](ClO4)2 、 硫酸 、 dodecyltrimethylammonium nitrate 作用下， 以 水 为溶剂， 生成 β-bromo-dl-malic acid
  参考文献：
  名称：

  Hu; Zhang; Chen, Polish Journal of Chemistry, 2009, vol. 83, # 3, p. 519 - 523

  摘要：

  DOI：

文献信息

• Alkylation of Ammonium Salts Catalyzed by Imidazolium-Based Ionic Liquid Catalysts
  作者：Zhuo Qun Zheng、Jie Wang、Ting Hua Wu、Xiao Ping Zhou

  DOI：10.1002/adsc.200600451

  日期：2007.5.7

  Quaternary ammonium salts were synthesized from ammonium salts and dialkyl carbonates over imidazolium ionic liquid catalysts. The reaction gave almost stoichiometric amounts of the quaternary ammonium salts for halides and nitrates. It was found that the electron-donating property of the alkyl moieties of ammonium cations, the electrophilic nature of the alkyl group of the carbonate, the acidity of

  在咪唑鎓离子液体催化剂上由铵盐和碳酸二烷基酯合成季铵盐。该反应产生了几乎化学计量的用于卤化物和硝酸盐的季铵盐。发现铵阳离子的烷基部分的供电子性，碳酸盐烷基的亲电子性质，铵盐的阴离子所对应的酸的酸度以及铵的空间位阻。盐和碳酸二烷基酯是影响季铵盐收率的关键因素。铵盐氮原子上的强供电子烷基，碳酸二烷基酯的亚甲基碳上的吸电子基团，
• CoMoW sulfide nanocatalysts for the HDS of DBT from novel ammonium and alkyltrimethylammonium-thiomolybdate-thiotungstate-cobaltate (II) precursors
  作者：Y. Espinoza-Armenta、J. Cruz-Reyes、F. Paraguay-Delgado、M. Del Valle、G. Alonso、S. Fuentes、R. Romero-Rivera

  DOI：10.1016/j.apcata.2014.08.017

  日期：2014.9

  Five unsupported, highly active CoMoW trimetallic nanocatalysts were obtained by in situ decomposition from five novel precursors: (NH4)(2)[Co(MoS4)(WS4)] and (RN(CH3)(3))(2)[(MoS4)(WS4)] (where R = dodecyl, tetradecyl, cetyl and octadecyl), during the HDS of DBT. The catalyst labeled CoMoWS-C14, derived from the precursor containing the tetradecyl group, exhibits the highest catalytic activity (k = 421 x 10(-7) mol/g s). N-2 adsorption-desorption shows that the CoMoW catalysts are mesoporous materials with characteristic Type IV isotherms, having surface areas of 11-340 m(2)/g. Elemental analysis by X-ray energy dispersive spectroscopy (EDS) working at STEM mode finds high concentrations of carbon (3.7 <= C/Mo <= 11.3 and 2.7 <= C/W <= 9) in all the catalysts except CoMoWS, where carbon was not detected. The XRD patterns show that the catalysts are highly dispersed (less so for the CoMoWS) given the absence of the (0 0 2) reflection, along with broad and low intensity (1 0 1) and (1 1 0) reflections. High dispersion is also supported by the STEM micrographs showing unstacked layers. The selectivity of the reaction for all catalysts favors the direct desulfurization pathway. The surface area and high catalytic activity do not show direct correlation with the length of the hydrocarbon chains of the precursors. (C) 2014 Elsevier B.V. All rights reserved.
• JPH1160289A
  申请人：——

  公开号：JPH1160289A

  公开（公告）日：1999-03-02
• POLISHING LIQUID
  申请人：KAMIMURA Tetsuya

  公开号：US20080203354A1

  公开（公告）日：2008-08-28

  The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.
• POLISHING LIQUID AND POLISHING METHOD USING THE SAME
  申请人：KAMIMURA Tetsuya

  公开号：US20090004863A1

  公开（公告）日：2009-01-01

  The present invention provides a polishing liquid for polishing a ruthenium-containing barrier layer, the polishing liquid being used in chemical mechanical polishing for a semi-conductor device having a ruthenium-containing barrier layer and conductive metal wiring lines on a surface thereof, the polishing liquid comprising an oxidizing agent; and a polishing particulate having hardness of 5 or higher on the Mohs scale and having a composition in which a main component is other than silicon dioxide (SiO 2 ). The present invention also provides a polishing method for chemical mechanical polishing of a semi-conductor device, the method contacting the polishing liquid with the surface of a substrate to be polished, and polishing the surface to be polished such that contacting pressure from a polishing pad to the surface to be polished is from 0.69 kPa to 20.68 kPa.