dibenzoylpyrene

• 分子结构分类: 有机化合物 - 苯类化合物 - 芘
• 英文名称: dibenzoylpyrene
• 英文别名: (1-Benzoylpyren-2-yl)-phenylmethanone；(1-benzoylpyren-2-yl)-phenylmethanone
• 化学式: C₃₀H₁₈O₂
• 分子量: 410.472
• InChiKey: ULXLYSJHBQGETP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  7.7
• 重原子数：
  32
• 可旋转键数：
  4
• 环数：
  6.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  34.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  芘 、 苯甲酰氯 、 1,2-二氯乙烷 在 三氯化铝 作用下， 以 甲醇 为溶剂， 生成 dibenzoylpyrene
  参考文献：
  名称：

  Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

  摘要：

  硬掩膜组成物的单体由以下化学式1表示。

  公开号：

  US09158201B2

文献信息

• MONOMER FOR HARDMASK COMPOSITION AND HARDMASK COMPOSITION INCLUDING THE MONOMER AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION
  申请人：LEE Sung-Jae

  公开号：US20140186777A1

  公开（公告）日：2014-07-03

  A monomer for a hardmask composition represented by the following Chemical Formula 1,

  一种用以下化学式1表示的硬掩膜组合物的单体。
• Compound for Resist and Radiation-Sensitive Composition
  申请人：Echigo Masatoshi

  公开号：US20080113294A1

  公开（公告）日：2008-05-15

  A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.

  一种辐射敏感的组合物，包含1至80重量％的固体组分和20至99重量％的溶剂。固体组分包含化合物B，其具有（a）通过向多酚化合物A的至少一个酚羟基引入酸解离基而导出的结构，多酚化合物A通过二元至四元芳香酮或芳香醛的缩合反应，每个具有5至36个碳原子的化合物与具有1至3个酚羟基和6至15个碳原子的化合物结合，并且（b）分子量为400至2000。含有化合物B的组合物非常敏感于辐射，例如KrF准分子激光器，极紫外线，电子束和X射线，并且提供具有高分辨率，高耐热性和高蚀刻抗性的抗阻图案，因此可用作酸放大的非聚合物抗阻材料。
• COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION
  申请人：ECHIGO Masatoshi

  公开号：US20110165516A1

  公开（公告）日：2011-07-07

  A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.

  一种辐射敏感组合物，含有1-80重量％的固体组分和20-99重量％的溶剂。固体组分包含化合物B，其具有（a）从多酚化合物A导出的结构，通过在多酚化合物A的至少一个酚羟基上引入酸解离基团而合成，多酚化合物A是由具有5至36个碳原子的二元至四元芳香酮或芳香醛与具有1至3个酚羟基和6至15个碳原子的化合物之间的缩合反应合成的；（b）分子量为400至2000。含有化合物B的组合物可用作酸放大，非聚合物抗蚀材料，因为它对KrF准分子激光、极紫外线、电子束和X射线等辐射非常敏感，并提供具有高分辨率、高耐热性和高蚀刻抗性的抗蚀图案。
• Compound for resist and radiation-sensitive composition
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP2662727A2

  公开（公告）日：2013-11-13

  A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a compound selected from the group consisting of compounds such as for instance diformylbenzene, diacetylbenzene and diformyltoluene; or a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 12 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.

  一种辐射敏感组合物，含有 1%至 80%（按重量计）的固体成分和 20%至 99%（按重量计）的溶剂。固体成分含有一种化合物 B，该化合物 B 具有 (a) 由多酚类化合物 A 衍生出的结构，该结构是通过在多酚类化合物 A 的至少一个酚羟基上引入酸解离基团而形成的，该多酚类化合物 A 是由选自以下组成的化合物组的化合物缩合合成的：例如二甲酰基苯、二乙酰基苯和二甲酰基甲苯；(b) 分子量为 400 至 2000。含有化合物 B 的组合物可用作酸放大的非聚合抗蚀剂材料，因为它对诸如 KrF 准分子激光、极紫外线、电子束和 X 射线等辐射高度敏感，并能提供具有高分辨率、高耐热性和高抗蚀性的抗蚀图案。
• COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION SPECIFICATION
  申请人：ECHIGO Masatoshi

  公开号：US20130004896A1

  公开（公告）日：2013-01-03

  A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.