PISANENKO D. A.; KOZLIKOVSKIJ YA. B.; BALITSKIJ YU. V., BECTH. KIEV. POLITEXN. IN-TA. XIM. MASHINOSTR. I TEXNOL., 1978, HO. 15, 2+
作者:PISANENKO D. A.、 KOZLIKOVSKIJ YA. B.、 BALITSKIJ YU. V.
DOI:——
日期:——
SILICON-CONTAINING CONDENSATE, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDER LAYER FILM, AND PATTERNING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20170154766A1
公开(公告)日:2017-06-01
The present invention provides a silicon-containing condensate comprising one or more repeating units selected from a repeating unit shown by the following general formula (A1), a repeating unit shown by the following general formula (A2), and a repeating unit shown by the following general formula (A3),
wherein R
1
represents a group shown by the following general formula (A-1) or (A-2); R
2
and R
3
each independently represent the same group as R
1
, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms other than R
1
.
There can be provided a silicon-containing condensate to give a composition for forming a silicon-containing resist under layer film which can form a resist under layer film with good adhesiveness to any resist pattern, whether the pattern is formed by negative development or positive development.
Mentzer; Molho; Dat Xuong, Bulletin de la Societe Chimique de France, 1948, p. 263,267
作者:Mentzer、Molho、Dat Xuong
DOI:——
日期:——
KOZLIKOVSKIJ YA. B.; PISANENKO D. A., IZV. VYSSH. UCHEB. ZAVEDENIJ. XIMIYA I XIM. TEXNOL., <IVUK-AR>, 1976, 19,+