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1-benzyloxycarbonyl-2-phenylbenzimidazole | 1289221-83-5

中文名称
——
中文别名
——
英文名称
1-benzyloxycarbonyl-2-phenylbenzimidazole
英文别名
benzyl 2-phenylbenzimidazole-1-carboxylate
1-benzyloxycarbonyl-2-phenylbenzimidazole化学式
CAS
1289221-83-5
化学式
C21H16N2O2
mdl
——
分子量
328.37
InChiKey
SZOXQWBSEGHYJQ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    4.9
  • 重原子数:
    25
  • 可旋转键数:
    4
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.05
  • 拓扑面积:
    44.1
  • 氢给体数:
    0
  • 氢受体数:
    3

反应信息

  • 作为产物:
    描述:
    2,6-二甲基吡啶氯甲酸苄酯2-苯基苯并咪唑氮气正己烷 作用下, 以 四氢呋喃 为溶剂, 反应 20.0h, 以obtaining 118 g of 1-benzyloxycarbonyl-2-phenylbenzimidazole (yield 72%)的产率得到1-benzyloxycarbonyl-2-phenylbenzimidazole
    参考文献:
    名称:
    NITROGEN-CONTAINING ORGANIC COMPOUND, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
    摘要:
    一种以咪唑基为基础的芳基氨基甲酸酯作为淬灭剂是有效的。在化学增感正向光阻组成物中,包含了这种氨基甲酸酯,当暴露于高能辐射时,与所产生的酸反应会发生去保护反应,从而使组成物在暴露前后改变其碱度,导致具有高分辨率、矩形形状和最小化暗亮差异等优点的图案轮廓。
    公开号:
    US20120052441A1
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文献信息

  • MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:SHIN-ETSU CHEMICAL CO., LTD.
    公开号:US20150322027A1
    公开(公告)日:2015-11-12
    A monomer (1) is prepared by reacting a compound (9) with a base or metal to form a metal enolate reagent, and reacting the metal enolate reagent with an acyloxyketone compound (8). A polymer derived from the monomer is used as base resin to formulate a resist composition, which is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness in forming positive pattern via alkaline development and in forming negative pattern via organic solvent development.
    一种单体(1)是通过将一种化合物(9)与碱或金属反应形成金属烯醇盐试剂,然后将金属烯醇盐试剂与一种酰氧基酮化合物(8)反应而制备的。由该单体派生出的聚合物用作基础树脂,以配制一种光刻胶组合物,该组合物在常温下稳定,显示出高溶解对比度、控制的酸性扩散和在碱性显影形成正图案以及有机溶剂显影形成负图案时低粗糙度。
  • NITROGEN-CONTAINING ORGANIC COMPOUND, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:SAGEHASHI Masayoshi
    公开号:US20120052441A1
    公开(公告)日:2012-03-01
    An aralkylcarbamate of imidazole base is effective as the quencher. In a chemically amplified positive resist composition comprising the carbamate, deprotection reaction of carbamate takes place by reacting with the acid generated upon exposure to high-energy radiation, whereby the composition changes its basicity before and after exposure, resulting in a pattern profile with advantages including high resolution, rectangular shape, and minimized dark-bright difference.
    咪唑基团的芳烷基碳酸酯作为猝灭剂是有效的。在包含该碳酸酯的化学放大正性光刻胶组合物中,碳酸酯的去保护反应是通过与在暴露于高能辐射时产生的酸反应来实现的,通过这种方式,组合物在曝光前后改变其碱性,从而得到具有高分辨率、矩形形状和最小化暗亮差异等优点的图案轮廓。
  • ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:US20210179554A1
    公开(公告)日:2021-06-17
    An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits a high sensitivity, and excellent lithography performance factors such as CDU and LWR.
    提供一种具有化学式(1)的醇铵盐,用作酸扩散抑制剂,以及包括该酸扩散抑制剂的化学增强型抗蚀剂组合物。当通过光刻加工时,该抗蚀剂组合物表现出高灵敏度和优异的光刻性能因素,例如CDU和LWR。
  • RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:US20200249571A1
    公开(公告)日:2020-08-06
    A resist composition comprising a sulfonium salt having formula (1) as PAG, a base polymer, and an organic solvent, when processed by lithography, has light transmittance, acid diffusion suppressing effect, and excellent lithography performance factors such as DOF, LWR and MEF. A lithography process for forming a resist pattern from the composition is also provided.
    一种抗蚀组合物,包括具有公式(1)作为PAG的磺酸盐、基础聚合物和有机溶剂。在光刻工艺中加工时,该组合物具有光透过率、抑制酸扩散效果和优异的光刻性能因素,例如DOF、LWR和MEF。还提供了一种从该组合物形成抗蚀图案的光刻工艺。
  • NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:US20200159115A1
    公开(公告)日:2020-05-21
    A novel salt having an amide bond in its anion structure is provided. A chemically amplified resist composition comprising the salt has advantages including minimal defects and improved values of sensitivity, LWR, MEF and CDU, when processed by lithography using high-energy radiation such as KrF excimer laser, ArF excimer laser, EB or EUV.
    提供了一种其阴离子结构中具有酰胺键的新型盐。包含该盐的化学放大型光刻胶组合物具有许多优点,包括在使用高能辐射(如KrF准分子激光、ArF准分子激光、电子束或EUV)进行光刻加工时,缺陷最小、灵敏度、LWR、MEF和CDU值得到改善。
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