n-Type Field-effect Transistors Based on Thieno[3,2-<i>b</i>]thiophene-2,5-dione and the Bis(dicyanomethylene) Derivatives
作者:Shiyan Chen、Altan Bolag、Jun-ichi Nishida、Yoshiro Yamashita
DOI:10.1246/cl.2011.998
日期:2011.9.5
Two new compounds, 3,6-bis(4-trifluoromethylphenyl)thieno[3,2-b]thiophene-2,5-dione (1) and 2,5-bis(dicyanomethylene)-3,6-bis(4-trifluoromethylphenyl)thieno[3,2-b]thiophene (2), were synthesized and characterized. The crystal structure of 1 was determined by single-crystal X-ray structure analysis. Organic field-effect transistors (OFETs) showed a relatively good mobility up to 0.039 cm2 V−1 s−1 in 1 and a better air stability in 2.
两种新化合物,3,6-双(4-三氟甲基苯基)噻吩并[3,2-b]噻吩-2,5-二酮 (1) 和 2,5-双(二氰亚甲基)-3,6-双(4-合成并表征了三氟甲基苯基)噻吩并[3,2-b]噻吩(2)。通过单晶X射线结构分析确定了1的晶体结构。有机场效应晶体管 (OFET) 在 1 中表现出相对较好的迁移率,高达 0.039 cm2 V−1 s−1,在 2 中表现出更好的空气稳定性。