SILICON COMPOUND, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM CONTAINING THE SAME AND PATTERNING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20130280912A1
公开(公告)日:2013-10-24
The invention provides a silicon compound represented by the following general formula (A-1) or (A-2),
wherein, R represents a hydrocarbon group having 1 to 6 carbon atoms, R
1
and R
2
represent an acid labile group, R
3
represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms, k represents an integer of 1 or 2, m represents an integer of 0, 1, or 2, and n represents an integer of 0 or 1.
There can be provided a resist underlayer film that can be applied not only to a resist pattern formed by a hydrophilic organic compound obtained in negative development but also to a resist pattern composed of a hydrophobic compound obtained in conventional positive development.