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11-phenoxyundecane-1-thiol | 204995-92-6

中文名称
——
中文别名
——
英文名称
11-phenoxyundecane-1-thiol
英文别名
11-Phenoxyundecane-1-thiol
11-phenoxyundecane-1-thiol化学式
CAS
204995-92-6
化学式
C17H28OS
mdl
——
分子量
280.475
InChiKey
JLIQHMJMZTWHPX-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    6.3
  • 重原子数:
    19
  • 可旋转键数:
    12
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.65
  • 拓扑面积:
    10.2
  • 氢给体数:
    1
  • 氢受体数:
    2

SDS

SDS:ff16b5ccaa586281ae1821cc3e9b29cd
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上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为产物:
    描述:
    potassium phenolate 在 lithium aluminium tetrahydride 、 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile 作用下, 以 四氢呋喃乙醚氯仿N,N-二甲基甲酰胺 为溶剂, 反应 28.0h, 生成 11-phenoxyundecane-1-thiol
    参考文献:
    名称:
    Preparation of High Quality Electrical Insulator Self-Assembled Monolayers on Gold. Experimental Investigation of the Conduction Mechanism through Organic Thin Films
    摘要:
    Self-assembled monolayers (SAMS) form highly ordered, stable dielectrics on conductive surfaces. Being able to attach larger-area contacts in a MIM (metal-insulator-metal) diode, their electrical properties can be determined. In this paper, the electrical conduction through thiolate SAMS of different alkyl chain lengths formed on gold surfaces were studied and discussed. The influence of the headgroup with respect to the surface quality and prevention of short circuits is investigated. Phenoxy terminated alkanethiols were found to form high quality SAMS with perfect insulating properties. Synthesis of the required terminally substituted long chain thiols have been developed. The I(V) characteristics of MIM structures formed with these SAMS are measured and simulated according to theoretical tunneling models for electrical conductivity through thin organic layers. SAM based electronic devices will become especially important for future nanoscale applications, where they can serve as insulators, gate dielectric of FETs, resistors, and capacitor structures.
    DOI:
    10.1021/ja0548992
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文献信息

  • Dipole-induced structure in aromatic-terminated self-assembled monolayers—A study by near edge x-ray absorption fine structure spectroscopy
    作者:Yan-Yeung Luk、Nicholas L. Abbott、J. N. Crain、F. J. Himpsel
    DOI:10.1063/1.1737303
    日期:2004.6.8
    The structure of self-assembled monolayers presenting aromatic rings at a surface is studied by near edge x-ray absorption fine structure spectroscopy (NEXAFS). Fluorine substitution at asymmetric positions in the aromatic rings is used to generate a layer of dipoles at the surface of the monolayer. We find that fluorine substituted aromatic rings are more ordered than unsubstituted aromatic rings
    通过近边缘X射线吸收精细结构光谱学(NEXAFS)研究了在表面上呈现芳环的自组装单分子层的结构。芳环中不对称位置的氟取代用于在单层表面上生成偶极子层。我们发现,基于最低的C 1s到pi *跃迁的极化相关性,氟取代的芳族环比未取代的芳族环更有序两倍,这与从与碳原子相连的苯基碳的跃迁有关。该结果与由于氟原子的取代引起的芳族基团之间的偶极-偶极相互作用和四极相互作用的影响是一致的。
  • Preparation of High Quality Electrical Insulator Self-Assembled Monolayers on Gold. Experimental Investigation of the Conduction Mechanism through Organic Thin Films
    作者:Steffen Maisch、Frank Buckel、Franz Effenberger
    DOI:10.1021/ja0548992
    日期:2005.12.1
    Self-assembled monolayers (SAMS) form highly ordered, stable dielectrics on conductive surfaces. Being able to attach larger-area contacts in a MIM (metal-insulator-metal) diode, their electrical properties can be determined. In this paper, the electrical conduction through thiolate SAMS of different alkyl chain lengths formed on gold surfaces were studied and discussed. The influence of the headgroup with respect to the surface quality and prevention of short circuits is investigated. Phenoxy terminated alkanethiols were found to form high quality SAMS with perfect insulating properties. Synthesis of the required terminally substituted long chain thiols have been developed. The I(V) characteristics of MIM structures formed with these SAMS are measured and simulated according to theoretical tunneling models for electrical conductivity through thin organic layers. SAM based electronic devices will become especially important for future nanoscale applications, where they can serve as insulators, gate dielectric of FETs, resistors, and capacitor structures.
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