AbstractDie Chlorierung von N‐[Bis‐methylmercapto‐methylen]‐Arylsulfonamiden bzw.‐alkylsulfonamiden führt zu N‐Dichlormethylen‐ bzw. N‐[Chlor‐methylmercapto‐methylen]‐sulfonamiden. N‐Dichlormethylen‐benzolsulfonamid setzt sich mit Äthylmercaptan zu N‐[Bis‐äthylmercaptomethylen]‐benzolsulfonamid, mit Aminen zu N‐Diaminomethylen‐benzolsulfonamiden (N‐Benzolsulfonyl‐guanidinen), mit Trialkylphosphiten zu N‐[Bis‐dialkoxyphosphinyl‐methylen]‐benzolsulfonamiden und mit Alkylammoniumchloriden zu N‐Benzolsulfonyl‐carbodiimiden um.
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN
申请人:FUJIFILM Corporation
公开号:US20150132688A1
公开(公告)日:2015-05-14
There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having (a) a repeating unit represented by the specific formula; a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film by using the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method; and an electronic device manufactured by the manufacturing method of an electronic device.
PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE
申请人:FUJIFILM CORPORATION
公开号:US20160018734A1
公开(公告)日:2016-01-21
There is provided a pattern forming method comprising (a) a step of forming a film on a substrate using an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, (b) a step of forming a top coat layer on the film using a top coat composition containing a resin (T) containing at least any one of repeating units represented by formulae (I-1) to (I-5) shown below, (c) a step of exposing the film having the top coat layer using an electron beam or an extreme ultraviolet radiation, and (d) a step of developing the film having the top coat layer after the exposure to form a pattern.
DUBINA, V. L.;DOBRONRAVOV, A. N., ZH. ORGAN. XIMII, 25,(1989) N, S. 1915-1920
作者:DUBINA, V. L.、DOBRONRAVOV, A. N.
DOI:——
日期:——
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME
申请人:HIRANO Shuji
公开号:US20120003590A1
公开(公告)日:2012-01-05
An actinic ray-sensitive or radiation-sensitive resin composition containing a resin having (A) a repeating unit represented by a specific formula (I) and (B) a repeating unit capable of generating an acid upon irradiation with an actinic ray or radiation.
ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN
申请人:FUJIFILM CORPORATION
公开号:US20140227636A1
公开(公告)日:2014-08-14
Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (Aa) containing at least one repeating unit (Aa1) derived from monomers of general formula (aa1-1) below and at least one repeating unit (Aa2) derived from monomers of general formula (aa2-1) below and comprising a resin (Ab) that when acted on by an acid, changes its alkali solubility.