(Propane-1,3-diyl)bis(tripropylphosphanium) difluoride | 1204424-34-9

• 物质功能分类: 分析化学 - 分析试剂 - 常用分析试剂
• 分子结构分类: 有机化合物 - 有机磷化合物 - 四烷基鏻化合物
• 英文名称: (Propane-1,3-diyl)bis(tripropylphosphanium) difluoride
• 英文别名: tripropyl(3-tripropylphosphaniumylpropyl)phosphanium;difluoride
• CAS: 1204424-34-9
• 化学式: C21H48F2P2
• 分子量: 400.5
• InChiKey: VTIOFIDOTGQIGA-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  1.88
• 重原子数：
  25
• 可旋转键数：
  16
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds
  申请人：Rohm and Haas Electronic Materials CMP Holdings, Inc.

  公开号：US10604678B1

  公开（公告）日：2020-03-31

  A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.

  本发明公开了一种工艺和组合物，用于抛光含有低浓度精选季鏻化合物的钨，以至少降低钨的腐蚀率。该工艺和组合物包括提供含有钨的基底；提供稳定的抛光组合物，其初始成分包括水；氧化剂；低浓度的精选季鏻化合物，以至少降低腐蚀率；二羧酸，铁离子源；胶体二氧化硅磨料；以及可选的 pH 值调节剂；提供具有抛光表面的化学机械抛光垫；在抛光垫和基体之间的界面处产生动态接触；以及在抛光垫和基体之间的界面处或界面附近将抛光组合物分配到抛光表面上；其中部分钨被抛光离开基体，钨的腐蚀率降低。
• CHEMICAL MECHANICAL POLISHING OF TUNGSTEN USING A METHOD AND COMPOSITION CONTAINING QUATERNARY PHOSPHONIUM COMPOUNDS
  申请人：Rohm and Haas Electronic Materials CMP Holdings, Inc.

  公开号：US20200255690A1

  公开（公告）日：2020-08-13

  A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.