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sodium 3-hydroxyadamantane-acetoxy-1,1,2,2-tetrafluorobutane-1-sulfonate | 1313214-09-3

中文名称
——
中文别名
——
英文名称
sodium 3-hydroxyadamantane-acetoxy-1,1,2,2-tetrafluorobutane-1-sulfonate
英文别名
Sodium 1,1,2,2-tetrafluoro-4-(3-hydroxyadamantane-1-carbonyloxy)butane-1-sulfonate;sodium;1,1,2,2-tetrafluoro-4-(3-hydroxyadamantane-1-carbonyl)oxybutane-1-sulfonate
sodium 3-hydroxyadamantane-acetoxy-1,1,2,2-tetrafluorobutane-1-sulfonate化学式
CAS
1313214-09-3
化学式
C15H19F4O6S*Na
mdl
——
分子量
426.362
InChiKey
WMWQNUJSEDOIOW-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    -0.97
  • 重原子数:
    27
  • 可旋转键数:
    7
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.93
  • 拓扑面积:
    112
  • 氢给体数:
    1
  • 氢受体数:
    10

反应信息

点击查看最新优质反应信息

文献信息

  • ACID GENERATORS AND PHOTORESISTS COMPRISING SAME
    申请人:Rohm and Haas Electronic Materials, LLC
    公开号:US20160002199A1
    公开(公告)日:2016-01-07
    Acid generator compounds are provided that are particularly useful as photoresist composition components. Preferred acid generators include cyclic sulfonium compounds that comprise a covalently linked acid-labile group.
    提供了一些作为光刻胶组分特别有用的酸发生剂化合物。首选的酸发生剂包括含有共价连接的酸敏感基团的环状化合物。
  • PHOTOACID-GENERATING COMPOUND AND ASSOCIATED POLYMER, PHOTORESIST COMPOSITION, AND METHOD OF FORMING A PHOTORESIST RELIEF IMAGE
    申请人:Rohm and Haas Electronic Materials LLC
    公开号:US20180095363A1
    公开(公告)日:2018-04-05
    A photoacid-generating compound has the structure wherein m, n, R 1 , R 2 , X, Y, and Z − are defined herein. The photoacid-generating compound exhibits strong absorption and chemical sensitivity to extreme ultraviolet radiation, while also absorbing longer wavelengths with desirably reduced chemical sensitivity. Also described are a polymer incorporating the residue of a polymerizable version of the photoacid-generating compound, a photoresist composition that includes the photoacid-generating compound, the polymer, or a combination thereof, and a method of forming a photoresist relief image using the photoresist composition.
    一种光酸生成化合物具有结构,其中m、n、R1、R2、X、Y和Z−在此处定义。该光酸生成化合物对极紫外辐射具有强吸收和化学敏感性,同时还吸收较长波长并具有较低的化学敏感性。还描述了一种聚合物,其中包含可聚合版本的光酸生成化合物的残留物,一种包含该光酸生成化合物、聚合物或两者组合的光阻剂组合物,以及使用该光阻剂组合物形成光阻剂
  • 치환된 아릴 오늄 물질
    申请人:ROHM AND HAAS ELECTRONIC MATERIALS LLC 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨(520040024286)
    公开号:KR20150035454A
    公开(公告)日:2015-04-06
    적어도 하나의 디에스테르 부분으로 치환된 카보시클릭 또는 헤테로방향족 그룹을 포함하는 산 발생제가 제공된다. 이 산 발생제는 포토레지스트 조성물 성분으로서 특히 유용하다.
    提供了一种含有至少一种二苯基代醚基团或杂环芳族基团的化合物作为替代卡波西环的一部分的光刻胶成分。该光刻胶成分特别有用作光阻剂。
  • Aryl acetate onium materials
    申请人:Rohm and Haas Electronic Materials LLC
    公开号:US09304394B2
    公开(公告)日:2016-04-05
    Acid generators comprising a carbocyclic aryl or heteroaromatic group substituted with at least one acetate moiety are provided. These acid generators are particularly useful as a photoresist composition component.
    提供了包含至少一个乙酸基取代的碳环芳基或杂环芳基的酸发生剂。这些酸发生剂特别适用作为光阻组分。
  • PHOTOACID GENERATOR, PHOTORESIST, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE
    申请人:Rohm and Haas Electronic Materials LLC
    公开号:US20150064620A1
    公开(公告)日:2015-03-05
    A photoacid generator compound has formula (1) wherein n is zero or 1; and R 1 -R 6 are each independently hydrogen, halogen, or unsubstituted or substituted C 1-20 linear or branched alkyl, C 1-20 cycloalkyl, C 6-20 aryl, C 3-20 heteroaryl, or an acid-generating group having the structure *L-Z − M + ] wherein L is an unsubstituted or substituted C 1-50 divalent group; Z − is a monovalent anionic group; and M + is an iodonium or sulfonium cation. Geminal R groups can combine to form a ring with the carbon to which they are attached, as long as no more than two such rings are formed. At least one of R 1 -R 6 includes the acid-generating group or two germinal R groups combine to form the acid-generating group. Also described are a photoresist composition incorporating the photoacid generator compound, a coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using a layer of the photoresist composition.
    一种光酸发生剂化合物的化学式为(1),其中n为零或1;R1-R6各自独立地为氢、卤素、未取代或取代的C1-20线性或支链烷基、C1-20环烷基、C6-20芳基、C3-20杂环芳基或具有结构*L-Z−M+的产生酸的基团,其中L为未取代或取代的C1-50二价基团;Z−为单价阴离子基团;M+为离子或离子阳离子。同位素R基团可以结合形成与它们附着的碳原子的环,只要不形成超过两个这样的环即可。R1-R6中至少有一个包括产生酸的基团,或两个同位素R基团结合形成产生酸的基团。还描述了包含光酸发生剂化合物的光刻胶组合物、包括光刻胶组合物层的涂覆基板以及使用光刻胶组合物层形成电子器件的方法。
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