24,48-Dibromo-7,17,28,38-tetrazatridecacyclo[24.16.2.22,5.18,12.129,33.03,22.04,19.06,17.023,43.027,38.040,44.016,46.037,45]octatetraconta-1(43),2(48),3(22),4(19),5(47),6,8,10,12(46),13,15,20,23,25,27,29,31,33(45),34,36,40(44),41-docosaene-18,39-dione | 956135-76-5

• 分子结构分类: 有机化合物 - 苯类化合物 - 菲及其衍生物
• 英文名称: 24,48-Dibromo-7,17,28,38-tetrazatridecacyclo[24.16.2.22,5.18,12.129,33.03,22.04,19.06,17.023,43.027,38.040,44.016,46.037,45]octatetraconta-1(43),2(48),3(22),4(19),5(47),6,8,10,12(46),13,15,20,23,25,27,29,31,33(45),34,36,40(44),41-docosaene-18,39-dione
• CAS: 956135-76-5
• 化学式: C₄₄H₁₈Br₂N₄O₂
• 分子量: 794.461
• InChiKey: WBCAYXDRTZLZKZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  10.1
• 重原子数：
  52
• 可旋转键数：
  0
• 环数：
  13.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  65.3
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  1,8-二氨基萘 、 1,7-二溴-3,4,9,10-苝四羧基双酐 在 吡嗪 、 苯酚 作用下， 生成 21,42-Dibromo-7,17,28,38-tetrazatridecacyclo[24.16.2.22,5.18,12.129,33.03,22.04,19.06,17.023,43.027,38.040,44.016,46.037,45]octatetraconta-1(42),2,4,6,8,10,12(46),13,15,19,21,23(43),24,26(44),27,29,31,33(45),34,36,40,47-docosaene-18,39-dione 、 24,48-Dibromo-7,17,28,38-tetrazatridecacyclo[24.16.2.22,5.18,12.129,33.03,22.04,19.06,17.023,43.027,38.040,44.016,46.037,45]octatetraconta-1(43),2(48),3(22),4(19),5(47),6,8,10,12(46),13,15,20,23,25,27,29,31,33(45),34,36,40(44),41-docosaene-18,39-dione 、 21,42-Dibromo-7,17,28,38-tetrazatridecacyclo[24.16.2.22,5.18,12.129,33.03,22.04,19.06,17.023,43.028,39.040,44.016,46.037,45]octatetraconta-1(42),2,4,6,8,10,12(46),13,15,19,21,23(43),24,26(44),29,31,33(45),34,36,38,40,47-docosaene-18,27-dione
  参考文献：
  名称：

  Method for producing organic field-effect transistors

  摘要：

  一种生产有机场效应晶体管的方法，包括以下步骤：a）提供包括栅结构、位于基底上的源电极和漏电极的基底，并b）将n-型有机半导体化合物应用于基底上栅结构、源电极和漏电极所在的区域，其中n-型有机半导体化合物选自以下化合物组：式I的化合物其中R1、R2、R3和R4独立地是氢、氯或溴，但至少其中一个基团不是氢，Y1是O或NRa，其中Ra是氢或有机残基，Y2是O或NRb，其中Rb是氢或有机残基，Z1、Z2、Z3和Z4是O，在Y1是NRa的情况下，残基Z1和Z2中的一个可以是NRc基团，其中Ra和Rc一起是具有2到5个原子的端部键之间的桥连接基团，在Y2是NRb的情况下，残基Z3和Z4中的一个可以是NRd基团，其中Rb和Rd一起是具有2到5个原子的端部键之间的桥连接基团。

  公开号：

  US07910736B2

文献信息

• METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
  申请人：Konemann Martin

  公开号：US20070259475A1

  公开（公告）日：2007-11-08

  A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R 1 , R 2 , R 3 and R 4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y 1 is O or NR a , wherein R a is hydrogen or an organyl residue, Y 2 is O or NR b , wherein R b is hydrogen or an organyl residue, Z 1 , Z 2 , Z 3 and Z 4 are O, where, in the case that Y 1 is NR a , one of the residues Z 1 and Z 2 may be a NR c group, where R a and R c together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y 2 is NR b , one of the residues Z 3 and Z 4 may be a NR d group, where R b and R d together are a bridging group having 2 to 5 atoms between the terminal bonds.
• US7910736B2
  申请人：——

  公开号：US7910736B2

  公开（公告）日：2011-03-22
• [EN] METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS<br/>[FR] PROCÉDÉ DE PRODUCTION DE TRANSISTORS À EFFET DE CHAMP ORGANIQUES
  申请人：BASF AG

  公开号：WO2007128774A1

  公开（公告）日：2007-11-15

  [EN] A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula (I) wherein R¹, R², R³ and R⁴ are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y¹ is O or NR^a, wherein R^a is hydrogen or an organyl residue, Y² is O or NR^b, wherein R^b is hydrogen or an organyl residue, Z¹, Z², Z³ and Z⁴ are O, where, in the case that Y¹ is NR^a, one of the residues Z¹ and Z² may be a NR^c group, where R^a and R^c together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y² is NR^b, one of the residues Z³ and Z⁴ may be a NR^d group, where R^b and R^d together are a bridging group having 2 to 5 atoms between the terminal bonds.
  [FR] La présente invention concerne un procédé de production d'un transistor à effet de champ organique. A cet effet, a) on prend un substrat comprenant une structure de grille, une électrode source, et une électrode collectrce située sur le substrat, et b) un applique un composé organique semiconducteur de type n sur la zone du substrat occupée par la structure de grille, l'électrode source, et l'électrode collectrice. En l'occurrence, le composé organique semiconducteur de type n est choisi dans un groupe constitué de composés représentés par la formule (I). Dans cette formule, R¹, R², R³ et R⁴ sont indépendamment hydrogène, chlore ou brom (à la condition que l'un au moins de ces radicaux ne soit pas hydrogène). Y¹ est O ou NR^a, R^a étant hydrogène ou un résidu organyle. Y² est O ou NR^b, R^b étant hydrogène ou un résidu organyle. Z¹, Z², Z³ et Z⁴ sont O. Toutefois, si Y¹ est NR^a, l'un des résidus Z¹ et Z² peut être un groupe NR^c dans lequel R^a et R^c forment ensemble un groupe en pont portant 2 à 5 atomes entre les liaisons terminale bonds. En outre, su Y² est NR^b, l'un des résidus Z³ et Z⁴ peut être un groupe NR^d group. Et enfin, R^b et R^d forment ensemble un groupe en pont portant 2 à 5 atomes entre les liaisons terminales.
• Method for producing organic field-effect transistors
  申请人：BASF Aktiengesellschaft

  公开号：US07910736B2

  公开（公告）日：2011-03-22

  A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3and R4are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

  一种生产有机场效应晶体管的方法，包括以下步骤：a）提供包括栅结构、位于基底上的源电极和漏电极的基底，并b）将n-型有机半导体化合物应用于基底上栅结构、源电极和漏电极所在的区域，其中n-型有机半导体化合物选自以下化合物组：式I的化合物其中R1、R2、R3和R4独立地是氢、氯或溴，但至少其中一个基团不是氢，Y1是O或NRa，其中Ra是氢或有机残基，Y2是O或NRb，其中Rb是氢或有机残基，Z1、Z2、Z3和Z4是O，在Y1是NRa的情况下，残基Z1和Z2中的一个可以是NRc基团，其中Ra和Rc一起是具有2到5个原子的端部键之间的桥连接基团，在Y2是NRb的情况下，残基Z3和Z4中的一个可以是NRd基团，其中Rb和Rd一起是具有2到5个原子的端部键之间的桥连接基团。