N-(trifluoromethylsulfonyl)adamantane-1-carboxamide | 35533-84-7

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: N-(trifluoromethylsulfonyl)adamantane-1-carboxamide
• CAS: 35533-84-7
• 化学式: C₁₂H₁₆F₃NO₃S
• 分子量: 311.325
• InChiKey: WYMKGHSSUKVITH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.9
• 重原子数：
  20
• 可旋转键数：
  2
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  71.6
• 氢给体数：
  1
• 氢受体数：
  6

反应信息

• 作为产物：
  描述：

  trifluoromethanesulphonamide sodium salt 、 金刚烷酰氯 以 丙酮 为溶剂， 生成 N-(trifluoromethylsulfonyl)adamantane-1-carboxamide
  参考文献：
  名称：

  Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: F: PerFHalOrg.2, 1.3.3, page 120 - 137

  摘要：

  DOI：

文献信息

• RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR
  申请人：HADA Hideo

  公开号：US20120264061A1

  公开（公告）日：2012-10-18

  A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) including a compound represented by (b1-1), a compound represented by (b1-1′) and/or a compound represented by (b1-1″) (R 1 ″-R 3 ″ represents an aryl group or an alkyl group, provided that at least one of R 1 ″-R 3 ″ represents a substituted aryl group being substituted with a group represented by (b1-1-0), and two of R 1 ″-R 3 ″ may be mutually bonded to form a ring with the sulfur atom; X represents a C 3 -C 30 hydrocarbon group; Q 1 represents a carbonyl group-containing divalent linking group; X 10 represents a C 1 -C 30 hydrocarbon group; Q 3 represents a single bond or a divalent linking group; Y 10 represents —C(═O)— or —SO 2 —; Y 11 represents a C 1 -C 10 alkyl group or a fluorinated alkyl group: Q 2 represents a single bond or an alkylene group; and W represents a C 2 -C 10 alkylene group).

  一种抗蚀组合物，包括在酸和酸发生剂组分（B）的作用下，在碱性显影溶液中表现出改变溶解性的基础组分（A），所述酸发生剂组分（B）包括由（b1-1）表示的化合物，由（b1-1'）表示的化合物和/或由（b1-1''）表示的化合物（R1''-R3''表示芳基或烷基，但至少其中一个R1''-R3''表示被(b1-1-0)表示的基团取代的取代芳基，且其中两个R1''-R3''可以相互键合以形成与硫原子形成环的环；X表示C3-C30烃基；Q1表示含有羰基的二价连接基团；X10表示C1-C30烃基；Q3表示单键或二价连接基团；Y10表示—C(═O)—或—SO2—；Y11表示C1-C10烷基或氟代烷基；Q2表示单键或烷基基团；W表示C2-C10烷基基团。
• Resist composition, method of forming resist pattern, novel compound, and acid generator
  申请人：Kawaue Akiya

  公开号：US20100136478A1

  公开（公告）日：2010-06-03

  A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety represented by general formula (I) (in the formula, R 5 represents an organic group having a carbonyl group, an ester bond or a sulfonyl group; and Q represents a divalent linking group).

  一种抗蚀组合物，包括在酸发生剂的作用下在碱性显影溶液中表现出改变溶解度的基础组分（A）和在暴露后产生酸的酸发生剂组分（B），酸发生剂组分（B）包括含有由通式（I）表示的阳离子基团的化合物的酸发生剂（B1）（在该式中，R5代表具有羰基、酯键或磺酰基的有机基团；Q代表二价连接基团）。
• Resist composition, method of forming resist pattern, novel compound and acid generator
  申请人：Kawaue Akiya

  公开号：US20100196820A1

  公开（公告）日：2010-08-05

  A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety represented by general formula (I) (in the formula, R 5 represents a hydrogen atom or an organic group of 1 to 30 carbon atoms which may have a substituent; and Q 5 represents a single bond or a divalent linking group).

  一种抗蚀组合物，包括在酸处理下在碱性显影溶液中表现出溶解性变化的基础组分（A）和在暴露后生成酸的酸生成组分（B），酸生成组分（B）包括含有由通式（I）表示的阳离子基团的酸生成剂（B1）（在该式中，R5代表氢原子或具有1至30个碳原子的有可能具有取代基的有机基团；Q5代表单键或二价连接基团）。
• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND
  申请人：FUJIFILM CORPORATION

  公开号：US20160070167A1

  公开（公告）日：2016-03-10

  There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.

  提供了一种图案形成方法，包括（i）形成一种薄膜，其中包含一种感光树脂组成物，该组成物包含（A）一种特定化学式代表的化合物，（B）一种不同于化合物（A）的化合物，在接受光辐射后能够产生酸，并且（P）一种树脂，该树脂不会与从化合物（A）产生的酸发生反应，并且能够通过来自化合物（B）产生的酸的作用降低有机溶剂含有的显影剂的溶解度，（ii）曝光薄膜，（iii）使用有机溶剂含有的显影剂对曝光后的薄膜进行显影，形成负图案；上述感光树脂组成物；使用该组成物的抗蚀膜。
• RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME
  申请人：KAWAUE Akiya

  公开号：US20100081088A1

  公开（公告）日：2010-04-01

  A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the acid-generator component (B) includes an acid generator (B1) composed of a compound having a base dissociable group within a cation moiety.

  一种抗蚀组合物，包括一种基础成分(A)，在碱性显影液中在酸的作用下表现出改变的溶解度，以及一种酸发生器成分(B)，在曝光后生成酸，其中酸发生器成分(B)包括一种酸发生器(B1)，该酸发生器由具有阳离子部分中的碱性可解离基团的化合物组成。