High efficiency and low efficiency roll-off hole-transporting layer-free solution-processed fluorescent NIR-OLEDs based on oligothiophene–benzothiadiazole derivatives
作者:Taweesak Sudyoadsuk、Pongsakorn Chasing、Terdkait Kaewpuang、Thanaporn Manyum、Chaiyon Chaiwai、Supawadee Namuangruk、Vinich Promarak
DOI:10.1039/d0tc00450b
日期:——
oligothiophene–benzothiadiazoles as an acceptor. In the solid state, they exhibited strong near-infrared (NIR) emission with high fluorescence quantum yield when doped in the CBP host and low lying HOMO levels suitable for hole-transporting NIR fluorescent emitters for organic light-emitting diodes (OLEDs). Simple hole-transporting layer free solution-processed double-layer OLEDs (ITO/PEDOT:PSS (40
我们报道了简单的低带隙D–A–D型发色团,其中包括三叶胺作为供体,寡聚噻吩–苯并噻二唑为受体。在固态状态下,当掺入CBP主体时,它们表现出强的近红外(NIR)发射和高荧光量子产率,以及低的HOMO能级,适用于有机发光二极管(OLED)的空穴传输NIR荧光发射体。简单的无空穴传输层无溶液处理双层OLED(ITO / PEDOT:PSS(40 nm)/ EML(60 nm)/ TPBi(35 nm)/ LiF(0.5 nm):Al(150 nm))证明具有近红外光谱发射(702–758 nm),具有出色的1.52%的最大EQE,低效率的滚降和4463 mW Sr -1 m -2的高最大辐射,这是基于有机荧光材料的NIR-OLED的最佳性能之一。