Dithienosilole− and Dibenzosilole−Thiophene Copolymers as Semiconductors for Organic Thin-Film Transistors
作者:Hakan Usta、Gang Lu、Antonio Facchetti、Tobin J. Marks
DOI:10.1021/ja062908g
日期:2006.7.19
''-bithieno)bithiophene) (TS6T2), poly(2,5'-bis(2' ',2' ''-dioctylsilylene-1' ',1' ''-biphenyl)thiophene) (BS8T1), and poly(2,5'-bis(2' ',2' ''-dioctylsilylene-1' ',1' ''-biphenyl)bithiophene) (BS8T2). Organic field-effect transistors (OFETs) with hole carrier mobilities as high as 0.02-0.06 cm2/V s in air, low turn-on voltages, and current on/off ratios >105-106 are fabricated using solution processing techniques with
报道了一类新的含噻吩/芳烃硅氧烷的 pi 共轭聚合物的合成和理化性质。这种新聚合物类别的例子包括:聚(2,5-双(3',3''-二己基亚甲硅烷基-2',2''-二噻吩)噻吩)(TS6T1)、聚(2,5'-双(3' ',3' ''-dihexylsilylene-2' ',2' ''-bithieno)bithiophene) (TS6T2), poly(2,5'-bis(2' ',2' ''-dioctylsilylene-1) ' ',1' ''-联苯)噻吩) (BS8T1)和聚(2,5'-双(2' ',2' ''-二辛基亚硅烷-1' ',1' ''-联苯)联噻吩) (BS8T2)。有机场效应晶体管 (OFET) 的空穴载流子迁移率在空气中高达 0.02-0.06 cm2/V s,低导通电压和电流开/关比 > 105-106是使用溶液处理技术制造的,上面的聚合物作为有源沟道层。基于此类聚合物的