Mixed selenium-sulfur fused ring systems as building blocks for novel polymers used in field effect transistors
作者:Sarada P. Mishra、Anna E. Javier、Rui Zhang、Junying Liu、John A. Belot、Itaru Osaka、Richard D. McCullough
DOI:10.1039/c0jm00602e
日期:——
Eight novel polymer materials for transistor applications were prepared based on the fused ring building block selenolo[3,2-b]thiophene. The molecular structure of selenolo[3,2-b]thiophene was determined by single-crystal X-ray diffraction and was further modified for use as a monomer during the Stille synthesis of various copolymers containing substituted and unsubstituted thiophenes, thiazoles, dithienopyrroles (DTP) and benzothiadiazole subunits. The resultant polymers were analyzed for UV-Vis absorption and show a significant red shift when compared to regioregular poly(3-hexylthiophenes) (P3HT), attributed to the increased planarity and conjugation of the polymer backbone. Cyclic voltammetry experiments on the new polymers show that almost all of the new structures have a higher oxidation potential compared to P3HT, making them more stable toward oxidative doping under ambient atmospheres. The polymers were also evaluated for their electrical properties through their performance as the active layer in field effect transistors. The polymers showed relatively high mobility values, of which the highest observed value is 0.11 cm2 V−1s−1, with on/off ratios of about 105.
基于硒并[3,2-b]噻吩的熔融环结构单元,制备了八种用于晶体管的新型聚合物材料。通过单晶 X 射线衍射确定了硒并[3,2-b]噻吩的分子结构,并在含有取代和未取代噻吩、噻唑、二噻吩并吡咯(DTP)和苯并噻二唑亚基的各种共聚物的 Stille 合成过程中对其进行了进一步的单体修饰。对由此产生的聚合物进行了紫外-可见吸收分析,结果表明,与普通聚(3-己基噻吩)(P3HT)相比,这种聚合物的紫外-可见吸收发生了显著的红移,这是因为聚合物骨架的平面度和共轭度增加了。新聚合物的循环伏安实验表明,与 P3HT 相比,几乎所有新结构都具有更高的氧化电位,这使它们在环境气氛下对氧化掺杂更加稳定。此外,还通过这些聚合物在场效应晶体管中作为活性层的性能,对它们的电气特性进行了评估。这些聚合物显示出相对较高的迁移率值,其中观察到的最高值为 0.11 cm2 V-1s-1,导通/关断比约为 105。