The Rate of Charge Tunneling Is Insensitive to Polar Terminal Groups in Self-Assembled Monolayers in Ag<sup>TS</sup>S(CH<sub>2</sub>)<sub><i>n</i></sub>M(CH<sub>2</sub>)<sub><i>m</i></sub>T//Ga<sub>2</sub>O<sub>3</sub>/EGaIn Junctions
作者:Hyo Jae Yoon、Carleen M. Bowers、Mostafa Baghbanzadeh、George M. Whitesides
DOI:10.1021/ja409771u
日期:2014.1.8
substrate, -M- and -T are "middle" and "terminal" functional groups, and EGaIn is eutectic gallium-indium alloy. Twelve uncharged polar groups (-T = CN, CO2CH3, CF3, OCH3, N(CH3)2, CON(CH3)2, SCH3, SO2CH3, Br, P(O)(OEt)2, NHCOCH3, OSi(OCH3)3), having permanent dipole moments in the range 0.5 < μ < 4.5, were incorporated into the SAM. A comparison of the electrical characteristics of these junctions
本文描述了不带电的极性官能团对电荷传输速率的影响的物理有机研究,该研究通过穿过基于自组装单层 (SAM) 的 Ag(TS)S(CH2 )(n)M(CH2)(m)T//Ga2O3/EGaIn。这里Ag(TS)是模板剥离的银衬底,-M-和-T是“中间”和“末端”官能团,EGaIn是共晶镓铟合金。十二个不带电荷的极性基团 (-T = CN, CO2CH3, CF3, OCH3, N(CH3)2, CON(CH3)2, SCH3, SO2CH3, Br, P(O)(OEt)2, NHCOCH3, OSi(OCH3)3 ),具有在 0.5 < μ < 4.5 范围内的永久偶极矩,被合并到 SAM 中。将这些结的电特性与由正链烷硫醇盐形成的结的电特性进行比较,得出的结论是,电荷隧穿速率对用该组中的末端极性基团替换末端烷基不敏感。在这项工作中测量的电流密度表明,以非极性 n-烷基终止的 SAM 的隧道衰