3-ethyl-4,5-dimethyl-anisole | 408309-46-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: 3-ethyl-4,5-dimethyl-anisole
• 英文别名: 3-Aethyl-4,5-dimethyl-anisol；1-Ethyl-5-methoxy-2,3-dimethylbenzene；1-ethyl-5-methoxy-2,3-dimethylbenzene
• CAS: 408309-46-6
• 化学式: C₁₁H₁₆O
• 分子量: 164.247
• InChiKey: IYECWILQQSTGDD-UHFFFAOYSA-N

物化性质

• 沸点：
  132-133 °C(Press: 21 Torr)
• 密度：
  0.918±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.4
• 重原子数：
  12
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  3-ethyl-4,5-dimethyl-anisole 在 N,N-二甲基甲酰胺 、 三氯氧磷 作用下， 生成 3-ethyl-2,4,5,6-tetramethyl-anisole
  参考文献：
  名称：

  Buu-Hoi et al., Recueil des Travaux Chimiques des Pays-Bas, 1956, vol. 75, p. 311,314

  摘要：

  DOI：
• 作为产物：
  描述：

  3-乙基-5-甲基茴香醚 在 一水合肼 、 三氯氧磷 、 二乙二醇 作用下， 反应 2.0h， 生成 3-ethyl-4,5-dimethyl-anisole
  参考文献：
  名称：

  Buu-Hoi et al., Recueil des Travaux Chimiques des Pays-Bas, 1956, vol. 75, p. 311,314

  摘要：

  DOI：

文献信息

• Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same
  申请人：Ogihara Tsutomu

  公开号：US20100285407A1

  公开（公告）日：2010-11-11

  There is disclosed a thermosetting silicon-containing antireflection film-forming composition, to form a silicon-containing antireflection film in a multilayer resist process used in a lithography, wherein the composition is at least capable of forming—on an organic film that is an underlayer film having a naphthalene skeleton—a silicon-containing antireflection film whose refractive index “n” and extinction coefficient “k” at 193 nm satisfy the following relationship: 2n−3.08≦k≦20n−29.4 and 0.01≦k≦0.5. There can be provided, in a multilayer resist process used in a lithography, a thermosetting silicon-containing antireflection film-forming composition to form a silicon-containing antireflection film which can form an excellent pattern having depressed reflection of an exposing light at the time when a photoresist film is formed on the silicon-containing antireflection film formed on an organic film having a naphthalene skeleton as a resist underlayer film and subsequently a resist pattern is formed; has excellent dry etching properties between the photoresist film—which is the upperlayer of the silicon-containing antireflection film—and the organic film—which is the underlayer—; and has an excellent storage stability, and a substrate having the silicon-containing antireflection film from the composition for forming the silicon-containing antireflection film, and a patterning process using the same.
• US7879846B2
  申请人：——

  公开号：US7879846B2

  公开（公告）日：2011-02-01
• [EN] TETRACYCLIC INHIBITORS OF JANUS KINASES<br/>[FR] INHIBITEURS TETRACYCLIQUES DE JANUS KINASES
  申请人：INCYTE CORP

  公开号：WO2007038215A1

  公开（公告）日：2007-04-05

  [EN] The present invention provides compounds that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases.
  [FR] Cette invention concerne des composés qui modulent l'activité des Janus kinases et qui sont utilisés dans le traitement de maladies associées à l'activité des Janus kinases parmi lesquelles, par exemple, des maladies immunitaires, des affections cutanées, des syndromes myéloprolifératifs, le cancer et d'autres maladies.