4-[3,5-双叔丁基-1H-吡唑]苯胺 | 52708-33-5

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 唑类
• 中文名称: 4-[3,5-双叔丁基-1H-吡唑]苯胺
• 中文别名: 4-[3,5-二(叔丁基)-1H-吡唑-1-基]苯胺
• 英文名称: p-Aminophenyl-1-(3,5-di-t-butyl)pyrazol
• 英文别名: 1-p-Aminophenyl-3,5-di-t-butylpyrazol；4-(3,5-di-tert-butyl-pyrazol-1-yl)-aniline；4-[3,5-di(tert-butyl)-1H-pyrazol-1-yl]aniline；4-(3,5-ditert-butylpyrazol-1-yl)aniline
• CAS: 52708-33-5
• 化学式: C₁₇H₂₅N₃
• 分子量: 271.406
• InChiKey: FMNZOGJPLKROCT-UHFFFAOYSA-N

物化性质

• 熔点：
  205 °C

计算性质

• 辛醇/水分配系数(LogP)：
  4.6
• 重原子数：
  20
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.47
• 拓扑面积：
  43.8
• 氢给体数：
  1
• 氢受体数：
  2

安全信息

• 海关编码：
  2933199090

反应信息

• 作为产物：
  描述：

  3,5-Di-tert-butyl-1-(4-nitrophenyl)-pyrazol 以50%的产率得到
  参考文献：
  名称：

  BOUCHET P., BULL. SOC. CHIM. FRANCE , 1976, NO 5-6, PART. 2, 839-844

  摘要：

  DOI：

文献信息

• Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
  申请人：BASF SE

  公开号：US10899945B2

  公开（公告）日：2021-01-26

  Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

  一种化学机械抛光(CMP)组合物(Q)，用于对包含(i)钴和/或(ii)钴合金和(iii)Ti N和/或TaN的基体(S)进行化学机械抛光，其中所述CMP组合物(Q)包含 (E) 无机颗粒 (F) 至少一种包含氨基和酸基(Y)的有机化合物，其中所述化合物包含n个氨基和至少n+1个酸性质子，其中n为整数≥1。(G) 至少一种氧化剂，其用量为 0.2 至 2.5 wt.- %，以混合物总重量为基准。(H) 一种水介质，其中 CMP 组合物 (Q) 的 pH 值大于 6 但小于 9。
• USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES
  申请人：BASF SE

  公开号：EP3334794B1

  公开（公告）日：2020-02-19
• CHEMICAL MECHANICAL POLISHING COMPOSITION
  申请人：BASF SE

  公开号：EP3714012A1

  公开（公告）日：2020-09-30
• [EN] USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES<br/>[FR] UTILISATION D'UNE COMPOSITION DE POLISSAGE CHIMICO-MÉCANIQUE (CMP) POUR LE POLISSAGE DE SUBSTRATS COMPRENANT DU COBALT
  申请人：BASF SE

  公开号：WO2017025536A1

  公开（公告）日：2017-02-16

  Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and /or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer ≥ 1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.
• [EN] CHEMICAL MECHANICAL POLISHING COMPOSITION<br/>[FR] COMPOSITION DE POLISSAGE CHIMICO-MÉCANIQUE
  申请人：BASF SE

  公开号：WO2019101555A1

  公开（公告）日：2019-05-31

  The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) com- position comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.