The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.
本发明涉及一种能够通过气相沉积进行薄膜沉积的气相沉积化合物,特别是涉及一种能够应用于ALD或CVD的
硅前驱体,尤其是能够进行高温沉积的
硅前驱体,以及一种制造含
硅薄膜的方法。