acetic acid cyclohexyloxymethyl ester | 7706-52-7

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: acetic acid cyclohexyloxymethyl ester
• 英文别名: Essigsaeure-cyclohexyloxymethylester；Acetoxymethyl-cyclohexyl-aether；Cyclohexyloxymethyl-acetat；Cyclohexyloxymethyl acetate
• CAS: 7706-52-7
• 化学式: C₉H₁₆O₃
• 分子量: 172.224
• InChiKey: KGYRCMZVJRMKMC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.9
• 重原子数：
  12
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.89
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  氯甲基环己基醚 、 乙酸酐 在 sodium acetate 作用下， 生成 acetic acid cyclohexyloxymethyl ester
  参考文献：
  名称：

  Palfray; Sabetay, Bulletin de la Societe Chimique de France, 1928, vol. <4> 43, p. 901

  摘要：

  DOI：

文献信息

• CLEAVAGE OF METHYLTHIOMETHYL ETHERS BY ELECTROLYTIC PROCEDURE
  作者：Tadakatsu Mandai、Hiroyasu Yasunaga、Mikio Kawada、Junzo Otera

  DOI：10.1246/cl.1984.715

  日期：1984.5.5

  An electrolytic method for deblocking a methylthiomethyl group is newly developed.

  新开发了一种去除甲硫甲基的电解方法。
• Copper induced solvolysis of sulfur compounds
  作者：D. Uguen

  DOI：10.1016/s0040-4039(00)99932-5

  日期：1984.1

  The displacement of a phenylthio group by an acetate ion in some allylic or α-alcoxy sulfides and thioacetals was cleanly performed by treating them with a mixture of copper powder and cupric acetate in acetic acid.

  通过用铜粉和乙酸铜在乙酸中的混合物处理，可以干净地进行乙酸烯丙基或α-烷氧基硫化物和硫代乙缩醛中乙酸根离子对苯硫基的置换。
• ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20210149301A1

  公开（公告）日：2021-05-20

  An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.

  提供具有公式（1）的醇铵盐，作为酸扩散抑制剂和化学增强型抗蚀剂组合物。当通过光刻加工时，该抗蚀剂组合物表现出溶解对比度，抑制酸扩散效果以及出色的光刻性能因素，例如CDU，LWR和灵敏度。
• COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20160024005A1

  公开（公告）日：2016-01-28

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by the following formula (1) or (2), and the formula (1) and (2) are defined as herein, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising a step of exposing the resist film, and a step of developing the exposed film, and a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.

  提供了一种包含下列式子（1）或（2）所代表的化合物的光致射线敏感或辐射敏感的树脂组合物，其中式（1）和（2）的定义如本文所述，以及包括该光致射线敏感或辐射敏感的树脂组合物的光阻膜，以及包括曝光光阻膜的步骤和显影曝光膜的步骤的图案形成方法，以及包括图案形成方法的制造电子装置的方法，以及由电子装置的制造方法制造的电子装置。
• RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
  申请人：Momose Hikaru

  公开号：US20090198065A1

  公开（公告）日：2009-08-06

  To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K 1 and K 2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L 1 and L 2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M 1 , M 2 and M 3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y 1 and Y 2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R 1 represents H or a methyl group.

  提供一种抗蚀聚合物，其由一个具有结构式（1）或（2）所表示的酸分解单元作为结构单元，能够在DUV准分子激光微影或类似工艺中表现出小的线边粗糙度并产生少量缺陷。在式（1）和（2）中，n表示2至24的整数；J表示单键或二价碳氢基团，当n=2时可以具有取代基/杂原子，或者当n≥3时可以表示n价碳氢基团，可以具有取代基/杂原子；E表示聚合终止剂、链转移剂或聚合引发剂的残基；K1和K2分别表示至少选择自烷基、环烷基、氧烷基、芳烃、二价噻唑环、二价噁唑环和二价咪唑环中的至少一种；L1和L2分别表示至少选择自—C（O）O—、—C（O）—和—OC（O）—中的至少一种；M1、M2和M3分别表示至少选择自烷基、环烷基、氧烷基和芳烃中的至少一种；Y、Y1和Y2分别表示酸分解键；k1、k2、l1、l2、m1、m2和m3分别表示0或1；R1表示H或甲基基团。