SUBSTRATE CLEANER FOR COPPER WIRING, AND METHOD FOR CLEANING COPPER WIRING SEMICONDUCTOR SUBSTRATE
申请人:Wako Pure Chemical Industries, Ltd.
公开号:EP2647693A1
公开(公告)日:2013-10-09
It is an object of the present invention to provide a cleaning agent for a substrate having a copper wiring, which makes possible to sufficiently suppress elution of metal copper, and remove impurities or particles of copper hydroxide (II), copper oxide (II) and the like, generated by the chemical mechanical polishing (CMP) process, in cleaning of a semiconductor substrate after the chemical mechanical polishing (CMP) process, in a manufacturing process of the semiconductor substrate; and a method for cleaning a semiconductor substrate having a copper wiring, characterized by using the relevant substrate cleaner for a copper wiring: and the present invention relates to a cleaning agent for a substrate having a copper wiring consisting of an aqueous solution comprising [I] an amino acid represented by the following general formula [1], and [II] an alkylhydroxylamine; and a method for cleaning a semiconductor substrate having a copper wiring characterized by using the relevant cleaning agent for a substrate having a copper wiring;
(wherein R1 represents a hydrogen atom, a carboxymethyl group or a carboxyethyl group; and R2 and R3 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, which may have a hydroxyl group, provided that those where R1 to R3 are all hydrogen atoms are excluded.).
本发明的目的是提供一种用于具有铜布线的衬底的清洗剂,该清洗剂能够在半导体衬底的制造过程中,在化学机械抛光(CMP)工序后清洗半导体衬底时,充分抑制金属铜的洗脱,并除去化学机械抛光(CMP)工序产生的氢氧化铜(II)、氧化铜(II)等杂质或颗粒;以及一种用于清洗具有铜布线的半导体衬底的方法,其特征在于使用相关的用于铜布线的衬底清洗剂:以及本发明涉及一种用于具有铜布线的衬底的清洁剂,该清洁剂由水溶液组成,该水溶液包含[I]由以下通式[1]表示的氨基酸和[II]烷基羟胺;以及一种用于清洁具有铜布线的半导体衬底的方法,其特征在于使用用于具有铜布线的衬底的相关清洁剂;
(其中R1代表氢原子、羧甲基或羧乙基;R2和R3各自独立地代表氢原子或具有1至4个碳原子的烷基,该烷基可以具有羟基,但不包括R1至R3均为氢原子的情况)。