Trifluoromethyltriphenodioxazine: Air-Stable and High-Performance n-Type Semiconductor
摘要:
Two trifluoromethyltriphenodioxazines were efficiently synthesized as active materials for n-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Air-stable and high-performance thin film transistors based on the two compounds were fabricated.