The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.
本发明提供了一类分子
玻璃光刻胶(I和II),其主要结构为
双酚A,以及它们的制备方法。将光刻胶配方与光酸发生剂、
交联剂、光刻溶剂和其他添加剂混合成正或负光刻胶。通过旋涂在
硅晶片上形成具有均匀厚度的光刻胶。该光刻胶配方可用于现代光刻技术,例如248 nm光刻、193 nm光刻、极紫外(EUV)光刻、纳米压印光刻、电子束光刻,特别是在EUV光刻技术中。