(R)-(1-oxidobutan-2-yl)gallium hydride | 1338226-35-9

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 环氧化物
• 英文名称: (R)-(1-oxidobutan-2-yl)gallium hydride
• CAS: 1338226-35-9
• 化学式: C₄H₈GaO
• 分子量: 141.83
• InChiKey: YOADYPGWVSRWBS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.83
• 重原子数：
  6.0
• 可旋转键数：
  1.0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  9.23
• 氢给体数：
  0.0
• 氢受体数：
  1.0

反应信息

• 作为产物：
  描述：

  1,2-环氧丁烷 、 氢化镓 在 adamantane 作用下， 以 solid matrix 为溶剂， 生成 (R)-(1-oxidobutan-2-yl)gallium hydride 、
  参考文献：
  名称：

  Formation of Gallaoxetanes: C–O Activation of 1,2-Epoxybutane by Ground-State Ga Atoms

  摘要：

  Ga-69/71 atoms were reacted with 1,2-epoxybutane and its isotopomers, 1,2-epoicybutane-1,1-d(2) (CH3CH2(CHOCD2) over bar) and 1,2-epoxybutane-2-d(1) (CH3CH2(CDOCH2) over bar), under matrix-isolation conditions. The novel gallaoxetanes CH3CH2(CHCH2GaO) over bar and CH3CH2(CHCH2OGa) over bar, resulting from the insertion of the metal atom in the C-1-O and C-2-O bonds, respectively, of the 1,2-epoxybutane, were detected by EPR spectroscopy. The Ga and H hyperfine interaction (hfi) values of the gallaoxetanes, calculated using a DFT method, were used to help assign the EPR spectra. A third Ga-centered species, detected at 190 K, underwent spectral changes similar to those of the C-2-O insertion product upon isotopic substitution of the 1,2-epoxybutane. Although the Ga hfi for this species was 36% smaller than that of the C-2-O insertion product, the values for the H hfi were similar, suggesting that the carrier of the spectrum was the C-2-O insertion product where Ga was perturbed by the matrix constraints. The alkyl radical CH3CH2(center dot CH)CH2OGa, resulting from ring -opening at the C-2-O bond of 1,2-epoicybutane, was observed at temperatures below 150 K. This radical has been implicated in the formation of the C-2 0 insertion product The unusually small value found for two of the beta-hydrogens of the alkyl radical is discussed.

  DOI：

  10.1021/jp206717a