Cu(I)(ethyl 3-oxobutanoate)[P(OEt)3]2 | 1047616-87-4

• 分子结构分类: 有机化合物 - 有机杂环化合物
• 英文名称: Cu(I)(ethyl 3-oxobutanoate)[P(OEt)3]2
• CAS: 1047616-87-4
• 化学式: C₁₈H₃₉CuO₉P₂
• 分子量: 524.996
• InChiKey: PYHMHGNPXGKRFI-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  None
• 重原子数：
  None
• 可旋转键数：
  None
• 环数：
  None
• sp3杂化的碳原子比例：
  None
• 拓扑面积：
  None
• 氢给体数：
  None
• 氢受体数：
  None

反应信息

• 作为反应物：
  描述：

  Cu(I)(ethyl 3-oxobutanoate)[P(OEt)3]2 以 neat (no solvent) 为溶剂， 生成 铜
  参考文献：
  名称：

  Seedless Growth of Free-Standing Copper Nanowires by Chemical Vapor Deposition

  摘要：

  Free-standing copper nanowires were synthesized by a chemical vapor deposition process at low substrate temperatures using Cu(etac)[P(OEt)3]2 as a precursor. The process requires neither templates nor catalysts to produce copper nanowires of 70-100 nm in diameter, which exhibited high purity and crystallinity with [111] orientation. The grain structures of the films deposited from a series of Cu(I) alkyl 3-oxobutanoate complexes indicated that the high precursor stability was responsible for the columnar growth of the grains, which was evolved to the nanowires eventually.

  DOI：

  10.1021/ja049217+
• 作为产物：
  描述：

  乙酰乙酸乙酯钠 、 copper(l) chloride 、 亚磷酸三乙酯 以 四氢呋喃 为溶剂， 生成 Cu(I)(ethyl 3-oxobutanoate)[P(OEt)3]2
  参考文献：
  名称：

  Seedless Growth of Free-Standing Copper Nanowires by Chemical Vapor Deposition

  摘要：

  Free-standing copper nanowires were synthesized by a chemical vapor deposition process at low substrate temperatures using Cu(etac)[P(OEt)3]2 as a precursor. The process requires neither templates nor catalysts to produce copper nanowires of 70-100 nm in diameter, which exhibited high purity and crystallinity with [111] orientation. The grain structures of the films deposited from a series of Cu(I) alkyl 3-oxobutanoate complexes indicated that the high precursor stability was responsible for the columnar growth of the grains, which was evolved to the nanowires eventually.

  DOI：

  10.1021/ja049217+