ethylenediamine-bis((2-hydroxy-5-methylphenyl)acetic acid) | 3625-89-6

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: ethylenediamine-bis((2-hydroxy-5-methylphenyl)acetic acid)
• 英文别名: 2-[2-[[Carboxy-(2-hydroxy-5-methylphenyl)methyl]amino]ethylamino]-2-(2-hydroxy-5-methylphenyl)acetic acid
• CAS: 3625-89-6
• 化学式: C₂₀H₂₄N₂O₆
• 分子量: 388.42
• InChiKey: PMHVFNTVUMEMER-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.5
• 重原子数：
  28
• 可旋转键数：
  9
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.3
• 拓扑面积：
  139
• 氢给体数：
  6
• 氢受体数：
  8

反应信息

• 作为反应物：
  描述：

  甲醇 、 ethylenediamine-bis((2-hydroxy-5-methylphenyl)acetic acid) 在 盐酸 作用下， 反应 6.0h， 生成 (2-Hydroxy-5-methyl-phenyl)-(2-{[(2-hydroxy-5-methyl-phenyl)-methoxycarbonyl-methyl]-amino}-ethylamino)-acetic acid methyl ester; hydrochloride
  参考文献：
  名称：

  Wilson, Gerald J., Australian Journal of Chemistry, 1987, vol. 40, # 10, p. 1695 - 1704

  摘要：

  DOI：
• 作为产物：
  描述：

  二氯乙酸 、 对甲酚 、 乙二胺 在 sodium hydroxide 作用下， 以 甲醇 、 水 为溶剂， 反应 5.0h， 以58%的产率得到ethylenediamine-bis((2-hydroxy-5-methylphenyl)acetic acid)
  参考文献：
  名称：

  Wilson, Gerald J., Australian Journal of Chemistry, 1987, vol. 40, # 10, p. 1695 - 1704

  摘要：

  DOI：

文献信息

• Surface treatment composition and method for treating surface of substrate by using the same
  申请人：MITSUBISHI CHEMICAL CORPORATION

  公开号：EP0858102A2

  公开（公告）日：1998-08-12

  A surface treatment composition containing a complexing agent as a metal deposition preventive in a liquid medium, in which the complexing agent is an ethylenediaminephenol derivative of the following general formula (1) or its salt: wherein X1 and X2 are hydroxyl groups; Y1 to Y8 are respectively independently a hydrogen atom, a hydroxyl group, a halogen atom, a carboxyl group, a phosphonic acid group, a sulfonic acid group, a carbonyl group, a nitro group, a nitroso group, an amino group, an imino group, a nitrilo group, a nitrile group, a thiocyanate group, a hydroxyamino group, a hydroxyimino group, or an alkyl or alkoxy group which may have a substituent, provided that at least one of Y1 to Y8 is not a hydrogen atom; Z1 to Z4 are respectively independently a hydrogen atom, a carboxyl group or a sulfonic acid group; and R1 to R4 are respectively independently a hydrogen atom or an alkyl group which may have a substituent.

  一种含有络合剂的表面处理组合物，作为液体介质中的金属沉积防止剂，其中的络合剂是下式通式(1)的乙二胺苯酚衍生物或其盐： 其中 X1 和 X2 为羟基；Y1至Y8分别独立地为氢原子、羟基、卤素原子、羧基、膦酸基、磺酸基、羰基、硝基、亚硝基、氨基亚氨基、硝基、腈基、硫氰酸基、羟基氨基、羟基亚氨基、或可具有取代基的烷基或 烷氧基，条件是 Y1 至 Y8 中至少有一个不是氢原子；Z1 至 Z4 分别独立地为氢原子、羧基或磺酸基；以及 R1 至 R4 分别独立地为氢原子或可带有取代基的烷基。
• Substrate cleaning liquid media and cleaning method
  申请人：MITSUBISHI CHEMICAL CORPORATION

  公开号：EP1342777A1

  公开（公告）日：2003-09-10

  A substrate surface cleaning liquid medium and a cleaning method using the cleaning liquid medium which is capable of removing fine particulate contaminants from substrates for devices in the production of semiconductor devices, display devices, which cleaning liquid medium contains the following ingredients (A), (B), (C), and (D) , has a pH of 9 or higher, and a content of ingredient (C) of 0.01 to 4% by weight: (A) an ethylene oxide addition type surfactant which has an optionally substituted hydrocarbon group and a polyoxyethylene group in the same molecular structure and in which the ratio of the number of carbon atoms contained in the hydrocarbon group (m) to the number of oxyethylene groups in the polyoxyethylene group (n), m/n, is m/n≤1.5, (B) an alkali ingredient, (C) hydrogen peroxide, and (D) water.

  一种基底表面清洁液体介质和一种使用该清洁液体介质的清洁方法，该清洁液体介质能够去除半导体器件、显示器件生产设备基底上的微粒污染物，该清洁液体介质含有以下成分（A）、（B）、（C）和（D），pH 值为 9 或更高，成分（C）的含量为 0.01 至 4%（重量百分比）： (A) 环氧乙烷加成型表面活性剂，其分子结构中具有任选取代的烃基和聚氧 乙烯基，其中烃基所含碳原子数(m)与聚氧乙烯基中氧乙烯基数(n)之比 m/n 为 m/n≤1.5、 (B) 碱成分、 (C) 过氧化氢，以及 (D) 水。
• METHOD FOR CLEANING SURFACE OF SUBSTRATE
  申请人：MITSUBISHI CHEMICAL CORPORATION

  公开号：EP1389496A1

  公开（公告）日：2004-02-18

  A highly efficient method for cleaning a substrate, whereby in the cleaning of the substrate, ① in a short time, ② both particle contaminants and metal contaminants can be removed, and ③ a problem associated therewith, such as re-deposition of contaminants or a dimensional change due to etching, can be remarkably reduced, and which has the following characteristics. A method for cleaning a surface of a substrate, which comprises at least the following steps (1) and (2), wherein the step (2) is carried out after carrying out the step (1): Step (1): A cleaning step of cleaning the surface of the substrate with an alkaline cleaning agent containing a complexing agent, and Step (2): A cleaning step employing a cleaning agent having a hydrofluoric acid content C (wt%) of from 0.03 to 3 wt%, wherein the cleaning time t (seconds) of the substrate with said cleaning agent is at most 45 seconds, and C and t satisfy the relationship of 0.25≦tC1.29≦5.

  一种清洗基片的高效方法，在清洗基片的过程中，①在短时间内，②颗粒污染物和金属污染物都能被清除，③与之相关的问题，如污染物的再沉积或由于蚀刻引起的尺寸变化，可以显著减少，该方法具有以下特点。 一种清洁基底表面的方法，至少包括以下步骤（1）和（2）、 其中步骤(2)在步骤(1)之后进行： 步骤 (1)：用含有络合剂的碱性清洗剂清洗基底表面的清洗步骤，以及 步骤 (2)：使用氢氟酸含量 C（重量百分比）为 0.03 至 3 重量百分比的清洗剂的清洗步骤，其中使用所述清洗剂清洗基底的时间 t（秒）最多为 45 秒，且 C 和 t 满足 0.25≦tC1.29≦5。
• SUBSTRATE CLEANING LIQUID FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD
  申请人：MITSUBISHI CHEMICAL CORPORATION

  公开号：EP1715510A1

  公开（公告）日：2006-10-25

  To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, and a cleaning method. A cleaning solution for a substrate for a semiconductor device, which comprises an organic acid as component (a), an organic alkaline component as component (b), a surfactant as component (c) and water as component (d) and which has a pH of at least 1.5 and less than 6.5. A method for cleaning a substrate for a semiconductor device, which comprises cleaning a substrate for a semiconductor device having a Cu film and a low dielectric constant insulating film on its surface and having CMP treatment applied thereto, by means of the above cleaning solution for a substrate for a semiconductor device.

  提供一种用于半导体器件基板的清洗液，该清洗液能够同时去除颗粒污染物、有机污染物和金属污染物，而不会腐蚀基板表面，并且具有良好的水冲洗性，能够在短时间内使基板表面高度清洁，还提供了一种清洗方法。 一种用于半导体器件基板的清洗液，它由作为组分（a）的有机酸、作为组分（b）的有机碱、作为组分（c）的表面活性剂和作为组分（d）的水组成，其 pH 值至少为 1.5，小于 6.5。一种用于清洗半导体器件基片的方法，包括用上述半导体器件基片清洗液清洗表面有铜膜和低介电常数绝缘膜并经过 CMP 处理的半导体器件基片。
• METHOD FOR MANUFACTURING AQUEOUS DISPERSION OF OXIDIZED CARBON BLACK, AND METHOD FOR MANUFACTURING AQUEOUS DISPERSION OF OXIDIZED CARBON BLACK FOR INKJET INK
  申请人：Tokai Carbon Co., Ltd.

  公开号：EP3252111A1

  公开（公告）日：2017-12-06

  Provided is a method for easily producing an oxidized carbon black aqueous dispersion that can highly remove multivalent metal ions and exhibit excellent dispersion stability. A method for producing an oxidized carbon black aqueous dispersion by successively performing on an aqueous slurry of oxidized carbon black having one or more anionic functional groups on a surface thereof a neutralization step of mixing an alkali metal hydroxide and performing heating/neutralization in the presence of one or more selected from a water-soluble chelating agent and a salt thereof or after mixing an alkali metal hydroxide and performing heating/neutralization, mixing one or more selected from a water-soluble chelating agent and a salt thereof and a separation and removal step of separating and removing a multivalent metal ion chelate complex from a mixed solution obtained at the neutralization step using a separation membrane.

  本发明提供了一种易于生产氧化炭黑水分散液的方法，该分散液能够高度去除多价金属离子，并表现出优异的分散稳定性。 一种生产氧化炭黑水性分散液的方法，其方法是在表面具有一个或多个阴离子官能团的氧化炭黑水性浆料上连续进行以下中和步骤：在一种或多种选自水溶性螯合剂及其盐的存在下，或在混合碱金属氢氧化物并进行加热/中和之后，混合碱金属氢氧化物并进行加热/中和、混合一种或多种选自水溶性螯合剂及其盐，以及使用分离膜从中和步骤得到的混合溶液中分离和去除多价金属离子螯合物的分离和去除步骤。