Copper-Catalyzed Ring-Opening Silylation of Benzofurans with Disilane
作者:Hayate Saito、Keisuke Nogi、Hideki Yorimitsu
DOI:10.1002/anie.201806237
日期:2018.8.20
The reaction afforded (E)‐o‐(β‐silylvinyl)phenols with complete stereoselectivity. The scope of benzofurans was well explored, and functional groups such as chloro, fluoro, and acetal were compatible with the reaction conditions. DFT calculations were used to determine the energy profile of the silylation and the origin of the stereoselectivity. The silylated product was proven to be useful as a synthetic
Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
申请人:E.T.C. S.r.l.
公开号:EP2960280A1
公开(公告)日:2015-12-30
The present teachings relate to a photocrosslinkable composition including a partially fluorinated polymer, a photosensitive dehydrohalogenating agent, and a crosslinker. The photocrosslinkable composition can be used to prepare a patterned thin film having a high dielectric constant, for example, a dielectric constant greater than 10.
The present teachings relate to organic semiconductor formulations including an organic semiconducting compound in a liquid medium, where the liquid medium includes (1) a compound in liquid state that has electronic properties complementary to the electronic structure of the organic semiconducting compound and optionally (2) a solvent or solvent mixture for solubilizing the organic semiconducting compound. The present formulations can be used as inks in the fabrication of organic semiconductor devices.
Photopatternable compositions, patterned high k thin film dielectrics and related devices
申请人:Flexterra, Inc.
公开号:US10409159B2
公开(公告)日:2019-09-10
The present teachings relate to a photopatternable composition including a vinylidene fluoride-based polymer, a photosensitive non-nucleophilic base, and a crosslinking agent. The photopatternable composition can be used to prepare a patterned thin film component for use in an electronic, optical, or optoelectronic device such as an organic thin film transistor. The patterned thin film component can be used as a gate dielectric with a high dielectric constant, for example, a dielectric constant greater than 10.