Tetrakis-isopropyloxy-zinn

• 分子结构分类: 有机化合物 - 有机氧化合物 - 有机氧化物
• 英文名称: Tetrakis-isopropyloxy-zinn
• 英文别名: Propan-2-yloxytin(3+)；propan-2-yloxytin(3+)
• 化学式: 4C₃H₇O*Sn
• 分子量: 355.062
• InChiKey: VEGWTHOIWKRPHB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.49
• 重原子数：
  5
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  Tetrakis-isopropyloxy-zinn 以 neat (no solvent) 为溶剂， 生成 tin
  参考文献：
  名称：

  Teff; Minear; Baxter, Inorganic Chemistry, 1998, vol. 37, # 10, p. 2547 - 2553

  摘要：

  DOI：
• 作为产物：
  描述：

  bis(bis(trimethylsilyl)amido)tin(II) 、 异丙醇 以 乙醚 为溶剂， 生成 Tetrakis-isopropyloxy-zinn
  参考文献：
  名称：

  Teff; Minear; Baxter, Inorganic Chemistry, 1998, vol. 37, # 10, p. 2547 - 2553

  摘要：

  DOI：

文献信息

• Bond Energy Effects in Methane Oxidative Coupling on Pyrochlore Structures
  作者：C. Petit、A. Kaddouri、S. Libs、A. Kiennemann、J.L. Rehspringer、P. Poix

  DOI：10.1006/jcat.1993.1087

  日期：1993.4

  activity in oxidative coupling of methane. Calculations of the rare earth-oxygen (AO) and cocation-oxygen (BO) bond energies provide a new way to estimate the influence of bulk parameters on the formation of C2 hydrocarbons. The observed values of C2 yields on A2B2O7 catalysts (A = Sm, Gd or Eu) (B = Ti, Zr, or Sn) indicate that they increase with decreasing cocation-oxygen bond energy. The best of

  通式A 2 B 2 O 7的化合物已通过X射线衍射表征，并测试了甲烷氧化偶联中的催化活性。稀土-氧（AO）和共-氧（BO）键能的计算提供了一种新的方法来估算体积参数对C 2烃形成的影响。在A 2 B 2 O 7催化剂（A = Sm，Gd或Eu）（B = Ti，Zr或Sn）上观察到的C 2收率值表明，它们随着共-氧键能的降低而增加。这些系统中最好的（Sm 2 Sn 2 O 7）给出C 2 在973 K时产率为20％。
• Hirano, Shin-ichi; Hayashi, Takashi; Hattori, Akiyoshi, Journal of the American Ceramic Society, 1991, vol. 74, p. 1320 - 1324
  作者：Hirano, Shin-ichi、Hayashi, Takashi、Hattori, Akiyoshi

  DOI：——

  日期：——
• Gas-Sensing Properties of Spinodally Decomposed (Ti,Sn)O2 Thin Films
  作者：Shuichi Arakawa、Kenji Mogi、Ko-ichi Kikuta、Toshinobu Yogo、Shin-ichi Hirano、Yoji Seki

  DOI：10.1111/j.1151-2916.1999.tb01749.x

  日期：——

  The gas‐sensing properties of spinodally decomposed (Ti,Sn)O2 thin films on sapphire substrates were investigated for CO, C3H8, and C2H5OH, and hydrogen gases at a temperature of 500°C. The variation in the d‐spacing of the (101) plane of (Ti0.5Sn0.5)O2 films showed behavior that was typical of spinodal decomposition during annealing at a temperature of 900°C. Transmission electron micrographs of the spinodally decomposed (Ti,Sn)O2 films on sapphire (0112) substrates revealed the characteristic modulated structure. The modulated lamella microstructure consisted of TiO2‐ and SnO2‐rich regions at intervals of ∼10 nm. The films were very sensitive to hydrogen gas and revealed anisotropic electrical conduction that was influenced by the modulated microstructure, which is characteristic of spinodal decomposition.