Photoresist underlayer film-forming composition and pattern forming process
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2813891A2
公开(公告)日:2014-12-17
In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.
UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20140363956A1
公开(公告)日:2014-12-11
In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO
2
substrates.
US9620363B2
申请人:——
公开号:US9620363B2
公开(公告)日:2017-04-11
Guiotto, A.; Manzini, P.; Chilin, A., Journal of Heterocyclic Chemistry, 1985, vol. 22, p. 649 - 656
作者:Guiotto, A.、Manzini, P.、Chilin, A.、Pastorini, G.、Rodighiero, P.