CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION, METHOD AND SYSTEM FOR COBALT-CONTAINING SUBSTRATE
申请人:Versum Materials US, LLC
公开号:EP3257910A1
公开(公告)日:2017-12-20
Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise α-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0 < x <3.0, 1.33 < y <4.0), low-k, and ultra low-k films.
提供了用于抛光钴或含钴基底的化学机械抛光(CMP)组合物、方法和系统。CMP 组合物由 α-丙氨酸、研磨颗粒、磷酸盐、缓蚀剂、氧化剂和水组成。钴化学机械抛光组合物具有很高的钴去除率,以及钴膜与介质膜(如 TEOS、SixNy(1.0 < x <3.0,1.33 < y <4.0)、低-k 和超低-k 膜)的极高选择性。