Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I):
wherein: R1 represents H, F, methyl or fluorinated methyl; R2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR5, wherein R5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.
Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I):
wherein: R
1
represents H, F, methyl or fluorinated methyl; R
2
represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R
3
represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R
4
represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR
5
, wherein R
5
is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.
CN116041184
申请人:——
公开号:——
公开(公告)日:——
Dialkoxyphosphinyl-Substituted Enols of Carboxamides
作者:Jinhua Song、Hiroshi Yamataka、Zvi Rappoport
DOI:10.1021/jo0710679
日期:2007.9.1
p-An, Ph, i-Pr) with (MeO)2P(O)CH2CO2R [R = Me, CF3CH2, (CF3)2CH] gave 15 formal “amides” (MeO)2P(O)CH(CO2R)CONHX (6/7), and with (CF3CH2O)2P(O)CH2CO2R [R = Me, CF3CH2] they gave eight analogous amide/enols 17/18. X-ray crystallography of two 6/7, R = (CF3)2CH systems revealed Z-enols of amides structures (MeO)2P(O)C(CO2CH(CF3)2)C(OH)NHX 7 where the OH is cis and hydrogen bonded to the OP(OMe)2 group
异氰酸酯XNCO(例如X = p -An,Ph,i -Pr)与(MeO)2 P(O)CH 2 CO 2 R [R = Me,CF 3 CH 2,(CF 3)2 CH]的反应得到15个正式的“酰胺”(MeO)2 P(O)CH(CO 2 R)CONHX(6/7),以及(CF 3 CH 2 O)2 P(O)CH 2 CO 2 R [R = Me ,CF 3 CH 2 ]他们给8个类似的酰胺/烯醇17 / 18。X射线晶体学的两个6/7,R =(CF 3)2 CH系统显示Z-烯醇的酰胺结构(MeO)2 P(O)C(CO 2 CH(CF 3)2)C(OH)NHX在图7中,OH为顺式且氢键合至OP(OMe)2基团。R = Me,CF 3 CH 2的固体膦酸酯具有酰胺6结构。用1 H,13 C,19 F和31对溶液中的结构进行了研究1 H NMR谱。它们在很大程度上取决于取代基R和溶剂,在某种程度上取决