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1-amino-2-methyl-5-isopropylpyrrole | 328239-62-9

中文名称
——
中文别名
——
英文名称
1-amino-2-methyl-5-isopropylpyrrole
英文别名
2-Methyl-5-propan-2-ylpyrrol-1-amine
1-amino-2-methyl-5-isopropylpyrrole化学式
CAS
328239-62-9
化学式
C8H14N2
mdl
——
分子量
138.213
InChiKey
PCCGESRTELLLGU-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    235.7±43.0 °C(predicted)
  • 密度:
    1.00±0.1 g/cm3(Temp: 20 °C; Press: 760 Torr)(predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    2
  • 重原子数:
    10
  • 可旋转键数:
    1
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.5
  • 拓扑面积:
    31
  • 氢给体数:
    1
  • 氢受体数:
    1

反应信息

  • 作为反应物:
    描述:
    1-amino-2-methyl-5-isopropylpyrrole碳酸氢钠 作用下, 以 四氢呋喃乙腈 为溶剂, 反应 6.0h, 生成
    参考文献:
    名称:
    KRAS G12C抑制剂及其在医药上的应用
    摘要:
    本发明涉及一种新型化合物,其具有KRAS G12C调节活性。本发明还涉及这些化合物的制备方法以及包含其的药物组合物。
    公开号:
    CN112390796B
  • 作为产物:
    描述:
    6-甲基-2,5-庚二酮盐酸对甲苯磺酸 作用下, 以 1,4-二氧六环乙酸乙酯甲苯 为溶剂, 反应 2.0h, 生成 1-amino-2-methyl-5-isopropylpyrrole
    参考文献:
    名称:
    KRAS G12C抑制剂及其在医药上的应用
    摘要:
    本发明涉及一种新型化合物,其具有KRAS G12C调节活性。本发明还涉及这些化合物的制备方法以及包含其的药物组合物。
    公开号:
    CN112390796B
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文献信息

  • Catalysts for the polymerization of unsaturated compounds
    申请人:Kristen Oliver Marc
    公开号:US20050085527A1
    公开(公告)日:2005-04-21
    Bisimine compounds of the formula (I) where the symbols have the following meanings: A is a nonmetal selected from among N, S, O and P, R 1 is a radical of the formula NR 5 R 6 , R 2 is a radical of the formula NR 5 R 6 or NR 7 R 8 , alkyl, aryl or cycloalkyl, R 5 and R 6 together with the N atom form a 5-, 6- or 7-membered ring in which one or more of the —CH— or —CH 2 — groups may be replaced by suitable heteroatom groups and which may be saturated or unsaturated and unsubstituted or substituted or be fused with further carbacyclic or heterocarbacyclic 5- or 6-membered rings which may in turn be saturated or unsaturated and substituted or unsubstituted, and R 7 and R 8 are, independently of one another, alkyl, aryl or cycloalkyl radicals, and R 3 , R 4 are, independently of one another, H or alkyl, aryl or cycloalkyl radicals, and n is 1 or 2, are used to prepare bisimidinato complexes which can be used in the polymerization of unsaturated compounds.
    Bisimine化合物的化学式(I)中,符号的含义如下:A是从N、S、O和P中选取的非属,R1是化学式NR5R6的基团,R2是化学式NR5R6或NR7R8、烷基、芳基或环烷基的基团,R5和R6与N原子一起形成一个5、6或7元环,其中一个或多个—CH—或—CH2—基团可被适当的杂原子基团取代,环可以饱和或不饱和、未取代或取代,或与进一步的碳环或杂碳环的5或6元环融合,后者可以饱和或不饱和、取代或未取代,R7和R8是彼此独立的烷基、芳基或环烷基基团,R3、R4是彼此独立的H或烷基、芳基或环烷基基团,n为1或2,用于制备可用于聚合不饱和化合物的双咪唑配合物。
  • Organic thin-film transistor and method for manufacturing same
    申请人:FUJIFILM Corporation
    公开号:US10008671B2
    公开(公告)日:2018-06-26
    Provided are an organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, and a source electrode and a drain electrode on a substrate, in which the organic semiconductor layer contains an organic semiconductor and a block copolymer, and the block copolymer is at least one selected from specific block copolymers such as a styrene-(meth)acrylate ester block copolymer and may be phase-separated, and a method for manufacturing an organic thin-film transistor, which includes an organic semiconductor containing a phase-separated block copolymer, including: applying a coating solution which contains an organic semiconductor and a block copolymer for film formation; and heating the obtained film so that the block copolymer is self-assembled.
    提供了一种有机薄膜晶体管,包括:栅极、有机半导体层、栅极绝缘层以及基底上的源电极和漏电极,其中有机半导体层包含有机半导体和嵌段共聚物,嵌段共聚物至少是选自特定嵌段共聚物(如苯乙烯-(甲基)丙烯酸酯嵌段共聚物)中的一种,并且可以是相分离的;以及一种制造有机薄膜晶体管的方法,其中包括含有相分离嵌段共聚物的有机半导体,包括: 1:涂敷含有有机半导体和嵌段共聚物的涂层溶液,以形成薄膜;以及加热获得的薄膜,使嵌段共聚物自组装。
  • Organic semiconductor element, organic semiconductor composition, method of manufacturing organic semiconductor film, organic semiconductor film, and compound and polymer using the same
    申请人:FUJIFILM Corporation
    公开号:US11081651B2
    公开(公告)日:2021-08-03
    An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1), a compound of Formula (2), and/or a compound of Formula (3) or contains a polymer having a structure of any one of formed by Formulae (8) to (10): in which X1 represents a nitrogen atom or CRa, and rings A to B each represent a specific nitrogen-containing ring; Y1 represents an oxygen atom, a sulfur atom, CRb2, or NRc; V1 represents NRd, an oxygen atom, a sulfur atom, or a selenium atom; Ra to Rd each represent a hydrogen atom or a substituent; R1 represents a specific substituent, and p is an integer of 0 to 2; n represents 1 or 2; and * represents a bonding site.
    一种有机半导体元件,其中有机半导体层含有式(1)化合物、式(2)化合物和/或式(3)化合物,或含有具有式(8)至式(10)中任何一种结构的聚合物: 其中,X1 代表氮原子或 CRa,环 A 至 B 各代表一个特定的含氮环;Y1 代表氧原子、原子、CRb2 或 NRc;V1 代表 NRd、氧原子、原子或原子;Ra 至 Rd 各代表氢原子或取代基;R1 代表一个特定的取代基,p 为 0 至 2 的整数;n 代表 1 或 2;* 代表键合位点。
  • BISIMIDINOVERBINDUNGEN UND IHRE ÜBERGANGSMETALLKOMPLEXE SOWIE DEREN VERWENDUNG ALS KATALYSATOREN
    申请人:BASF AKTIENGESELLSCHAFT
    公开号:EP1204668B1
    公开(公告)日:2003-04-02
  • SEMICONDUCTOR DEVICE AND INSULATING LAYER-FORMING COMPOSITION
    申请人:FUJIFILM Corporation
    公开号:US20170054076A1
    公开(公告)日:2017-02-23
    Provided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, R 1a and R 1b each independently represent a hydrogen atom, a halogen atom, or an alkyl group. L 1a , L 2a , and L 1b each independently represent a single bond or a linking group. X represents a crosslinkable group and Y B represents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol “*” represents a bonding position of the repeating units.
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