methyl 4-[5-(5-methyl-1H-indol-3-yl)-1H-tetraazol-1-yl]phenyl ether

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 唑类
• 英文名称: methyl 4-[5-(5-methyl-1H-indol-3-yl)-1H-tetraazol-1-yl]phenyl ether
• 英文别名: 3-[1-(4-methoxyphenyl)tetrazol-5-yl]-5-methyl-1H-indole
• 化学式: C₁₇H₁₅N₅O
• 分子量: 305.33
• InChiKey: YAHJKZFIUGIYGE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.3
• 重原子数：
  23
• 可旋转键数：
  3
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.12
• 拓扑面积：
  68.6
• 氢给体数：
  1
• 氢受体数：
  4

文献信息

• Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
  申请人：BASF SE

  公开号：US10899945B2

  公开（公告）日：2021-01-26

  Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

  一种化学机械抛光(CMP)组合物(Q)，用于对包含(i)钴和/或(ii)钴合金和(iii)Ti N和/或TaN的基体(S)进行化学机械抛光，其中所述CMP组合物(Q)包含 (E) 无机颗粒 (F) 至少一种包含氨基和酸基(Y)的有机化合物，其中所述化合物包含n个氨基和至少n+1个酸性质子，其中n为整数≥1。(G) 至少一种氧化剂，其用量为 0.2 至 2.5 wt.- %，以混合物总重量为基准。(H) 一种水介质，其中 CMP 组合物 (Q) 的 pH 值大于 6 但小于 9。
• CHEMICAL MECHANICAL POLISHING COMPOSITION
  申请人：BASF SE

  公开号：US20200299547A1

  公开（公告）日：2020-09-24

  The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.
• USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES
  申请人：BASF SE

  公开号：US20210102093A1

  公开（公告）日：2021-04-08

  A chemical mechanical polishing composition may be used for chemical mechanical polishing of a substrate including (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition includes (A) inorganic particles (B) at least one organic compound including an amino-group and an acid group, the compound including n amino groups and at least n+1 acidic protons, a being a integer ≥1; (C) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the MP composition; and (D) an aqueous medium. The CMP composition may have a pH of more than 6 and less than 9.