Exploring the impact of novel thiazole-pyrazole fused benzo-coumarin derivatives on human serum albumin: Synthesis, photophysical properties, anti-cholinergic activity, and interaction studies
Amine-Catalyzed Cascade Synthesis of 3,4-Diunsubstituted Coumarins
作者:Jia Wei、Pengcheng Wang、Qianfa Jia、Jiaoyao Huang、Zhiyun Du、Kun Zhang、Jian Wang
DOI:10.1002/ejoc.201300538
日期:2013.7
We disclose an efficient route to synthesize 3,4-diunsubstitutedcoumarins through a cascade organocatalytic reaction. The reaction is catalyzed by using of a combination of benzylamine (10 mol-%) and triethylamine (10 mol-%). Various salicylaldehydes were tested, and the corresponding coumarin products were obtained in good to high yields under mild and metal-free reaction conditions.
Photoresist underlayer film-forming composition and pattern forming process
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2813891A2
公开(公告)日:2014-12-17
In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.
Co-initiator compositions for photopolymerization containing 3-acyl-substituted coumarins, photopolymerizable composition and photographic element
申请人:EASTMAN KODAK COMPANY
(a New Jersey corporation)
公开号:EP0022188B1
公开(公告)日:1984-10-03
METHOD FOR PRODUCING POLYDIENES AND POLYDIENE COPOLYMERS WITH REDUCED COLD FLOW
申请人:Bridgestone Corporation
公开号:US20140187725A1
公开(公告)日:2014-07-03
A method for preparing a coupled polymer, the method comprising the steps of: (i) polymerizing monomer to form a reactive polymer, and (ii) reacting the reactive polymer with coumarin or a substituted coumarin compound.
UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20140363956A1
公开(公告)日:2014-12-11
In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO
2
substrates.