Photovoltaic devices using semiconducting polymers containing head-to-tail-structured bithiophene, pyrene, and benzothiadiazole derivatives
作者:Ji-Hoon Kim、Sunyoung Lee、In-Nam Kang、Moo-Jin Park、Do-Hoon Hwang
DOI:10.1002/pola.26130
日期:2012.8.15
(DHBT) and pyrene units [poly(DHBT‐alt‐PYR)] was synthesized using a Stille coupling reaction for use in photovoltaic devices as a p‐type donor. For the reduction of the bandgap energy of poly(DHBT‐alt‐PYR), 4,7‐bis(3′‐hexyl‐2,2′‐bithiophen‐5‐yl)benzo[c][1,2,5]thiadiazole (BHBTBT) units were introduced into the polymer. Poly(DHBT‐co‐PYR‐co‐BHBTBT)s were synthesized using the same polymerization reaction
使用Stille偶联反应合成了由尾到尾结构的3,4'-二己基-2,2'-联噻吩(DHBT)和and单元[聚(DHBT- alt- PYR)]组成的交替共聚物在光伏设备中作为ap型供体。为了降低聚(DHBT- alt -PYR)的带隙能,4,7-双(3'-己基-2,2'-联噻吩-5-基)苯并[ c ] [1,2,5]噻二唑(BHBTBT)单元被引入到聚合物中。聚(DHBT‐ co‐ PYR‐ co‐BHBTBT)是使用相同的聚合反应合成的。合成的聚合物可溶于常见的有机溶剂中,并在旋涂后形成光滑的薄膜。从起始吸收波长获得聚合物的光学带隙能。测得的聚(DHBT- alt- PYR)的光学带隙能量为2.47 eV。正如在所述BHBTBT内容之三聚物增加,所得到的聚合物的光学带隙能量降低。聚(50DHBT- co- 40PYR- co- 10BHBTBT)和聚(50DHBT- co- 20PYR-