Enantiogenic total syntheses of (-)-indolizidines (bicyclic gephyrotoxins) 205A, 207A, 209B, and 235B via the intramolecular Diels-Alder reaction of a chiral N-acylnitroso compound
摘要:
A general protocol for the enantiogenic total syntheses of a series of the 5-substituted 8-methylindolizidine class of alkaloids from the arrow poison frog, i.e., (-)-indolizidines 205A (1), 207A (2), 209B (3), and 235B (4), is described, in which a key step is the asymmetric intramolecular Diels-Alder reaction of the chiral N-acylnitroso compound 8 leading to the bicyclic oxazinolactam 7 which was utilized as a versatile common chiral intermediate for the preparation of these alkaloids. Subsequent introduction of the C-5 (in future) side chain was elaborated by means of a completely stereocontrolled process involving a Grignard reaction followed by reduction with NaBH4 in acidic media. The bicyclic oxazines 20a, 24, and 26 thus obtained were then subjected to reductive N-O bond cleavage followed by cyclodehydration using PPh3/CBr4/Et3N, which provided the (-)-enantiomers of the title alkaloids.
ORGANIC INSULATING MATERIALS, VARNISHES FOR ORGANIC INSULATING FILM EMPLOYING THEM, ORGANIC INSULATING FILMS AND SEMICONDUCTOR DEVICES
申请人:MATSUTANI Mihoko
公开号:US20090318610A1
公开(公告)日:2009-12-24
There are provided organic insulating materials exhibiting low permittivity, high heat resistance and high mechanical strength, as well as organic insulating films with low permittivity, high heat resistance and high mechanical strength that employ the same, and semiconductor devices comprising the foregoing. An organic insulating material comprising a compound represented by general formula (1), or a polymer obtained by polymerizing a compound represented by general formula (1), or a mixture of a compound represented by general formula (1) and the polymer.
X-VW
n
Y (1)
(In formula (1), X and Y each independently represent one or more groups with polymerizable functional groups. V and W each represent a group having an adamantane or polyamantane structure, and they may be the same or different. The letter n represents an integer of 0 or greater).
The present invention provides a lipid compound comprising at least one non-polar moiety and a polar moiety, wherein each or at least one non-polar moiety is of the formula X—Y—Z, wherein X is a hydrocarbyl chain, Y is selected from at least one of S, Se, SO
2
, SO, and O, and Z is an optional hydrocarbyl group, wherein the polar moiety is of the formula —[C(O)]
m
PHG, wherein PHG is a polar head group, and wherein m is the number of non-polar moieties.
A method for preparing a cis-olefin of the formula :
R1-CH=CH-R2 by reducing an alkyne of the formula:
R1-C≡C-R2 with formic acid in the presence of a palladium catalyst. R1 and R2 are independently selected from the group consisting of a hydrogen atom, ester group, substituted silyl group, carboxyl group, cyano group, aliphatic CI-C20 hydrocarbon group, and phenyl group. The cis-olefin which is a useful intermediate for the synthesis of fine chemicals is selectively produced in high yields.
ORGANIC INSULATING MATERIAL, VARNISH FOR ORGANIC INSULATING FILM USING THE SAME, ORGANIC INSULATING FILM AND SEMICONDUCTOR DEVICE
申请人:Sumitomo Bakelite Co., Ltd.
公开号:EP2117009A1
公开(公告)日:2009-11-11
There are provided organic insulating materials exhibiting low permittivity, high heat resistance and high mechanical strength, as well as organic insulating films with low permittivity, high heat resistance and high mechanical strength that employ the same, and semiconductor devices comprising the foregoing. An organic insulating material comprising a compound represented by general formula (1), or a polymer obtained by polymerizing a compound represented by general formula (1), or a mixture of a compound represented by general formula (1) and the polymer.
(In formula (1), X and Y each independently represent one or more groups with polymerizable functional groups. V and W each represent a group having an adamantane or polyamantane structure, and they may be the same or different. The letter n represents an integer of 0 or greater.)
本发明提供了具有低介电常数、高耐热性和高机械强度的有机绝缘材料,以及具有低介电常数、高耐热性和高机械强度的有机绝缘薄膜,以及包含上述材料的半导体器件。一种有机绝缘材料,包括通式(1)所代表的化合物,或通过聚合通式(1)所代表的化合物而得到的聚合物,或通式(1)所代表的化合物与聚合物的混合物。
式(1)中,X 和 Y 各自独立地代表一个或多个具有可聚合官能团的基团。V 和 W 各自代表具有金刚烷或聚金刚烷结构的基团,它们可以相同或不同。字母 n 代表 0 或更大的整数)。
Seidel, Wolfgang; Schaefer, Hans J., Chemische Berichte, 1980, vol. 113, # 12, p. 3898 - 3903