Structural and optical investigations of charge transfer complexes involving the radical anions of TCNQ and F<sub>4</sub>TCNQ
作者:Ashley L. Sutton、Brendan F. Abrahams、Deanna M. D'Alessandro、Timothy A. Hudson、Richard Robson、Pavel M. Usov
DOI:10.1039/c6ce02015a
日期:——
reported. The compounds described have been categorised into three general types based upon solid-state arrangements of the donor and acceptor molecules. Crystallographic, EPR and IR spectroscopic investigations indicated that both TCNQ and F4TCNQ in each of the compounds described exist in the radical monoanion form. Visible-NIR absorption measurements indicate optical band gaps in the range of 0.79 to
十二种自由基阴离子7,7,8,8-四氰基喹二甲烷(TCNQ)和7,7,8,8-四氰基-2,3,4,5-四氟喹二甲烷(F 4 TCNQ)的电荷结构和光学带隙报告了转移复合物。基于供体和受体分子的固态排列,所描述的化合物已分为三种一般类型。晶体学,EPR和IR光谱研究表明TCNQ和F 4所描述的每种化合物中的TCNQ均以自由基单阴离子形式存在。可见光近红外吸收测量表明,光学带隙在0.79至1.08 eV的范围内。尽管已知CT络合物中的填充排列会影响带隙,但在此处考虑的情况下,填充排列与光学带隙之间没有明显的关系。结果表明,在不存在混合价的情况下,填充布置不会显着影响光学带隙的大小。