申请人:NISSAN CHEMICAL CORPORATION
公开号:US20190354018A1
公开(公告)日:2019-11-21
A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent.
In Formula (1), R
1
, R
2
, and R
3
in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R
1
, R
2
, and R
3
may be the same or different and may bond to each other to form a ring structure.