The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.
本发明属于在基底上生成无机薄膜的工艺领域,特别是原子层沉积工艺。它涉及一种制备
金属薄膜的工艺,包括:(a)将气态含
金属化合物沉积到固体基底上;(b)使带有沉积的含
金属化合物的固体基底与气态还原剂接触,其中还原剂是或至少部分地在固体基底表面形成碳烯、
硅烯或
磷自由基。