isopropyl 2,2-dimethylbutyrate | 5129-42-0

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: isopropyl 2,2-dimethylbutyrate
• 英文别名: Propan-2-yl 2,2-dimethylbutanoate
• CAS: 5129-42-0
• 化学式: C₉H₁₈O₂
• 分子量: 158.241
• InChiKey: BSQKFTUIWLMBMZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.7
• 重原子数：
  11
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.89
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  一氧化碳 、 异丙醇 、 正戊烷 在 2AlBr₃*CBr₄ 作用下， 以 various solvent(s) 为溶剂， 反应 1.0h， 生成 2-propyl 2-methylpentanoate 、 2-乙基丁酸异丙酯 、 isopropyl 2,2-dimethylbutyrate
  参考文献：
  名称：

  The first examples of selective carbonylation of n-butane and n-pentane

  摘要：

  The polyhalomethane based superelectrophilic systems allowed us to accomplish the first efficient and selective carbonylation of n-butane and n-pentane with CO. Depending on the nature of the superelectrophilic system, Me3CCOOR or EtCH(Me)COOR (R = H, Alk) can be obtained at -20 degrees C, I atm from n-butane and CO after water (or alcohol) treatment in approximate to 90% yield based on the superelectrophilic system. Pentane reacts with CO in the presence of the CBr4. 2AlBr(3) superacid to give a single product, EtC(Me)(2)COOR, in almost quantitative yield. (C) 1999 Elsevier Science Ltd. All rights reserved.

  DOI：

  10.1016/s0040-4039(99)01125-9

文献信息

• METHOD FOR PRODUCING a-SUBSTITUTED CYSTEINE OR SALT THEREOF OR SYNTHETIC INTERMEDIATE OF a-SUBSTITUTED CYSTEINE
  申请人：API Corporation

  公开号：US20160083341A1

  公开（公告）日：2016-03-24

  According to the present invention, it becomes possible to perform a process for converting into an α-substituted cysteine represented by general formula (1) or a salt thereof at low cost and on an industrial scale by employing a process that is routed through a compound represented by general formula (3) to a compound represented by general formula (6). Particularly, by employing a process that is routed through a compound represented by general formula (7-2), it becomes possible to detach a tert-butyl protection group in a simple manner and to produce the compound represented by general formula (1) with high purity. Furthermore, by employing a process that is routed through tert-butylthiomethanol or a process that is routed through a compound represented by general formula (9), it becomes possible to produce a compound represented by general formula (2) without generating bischloromethylether that is an oncogenic substance. In the production of an α-substituted-D-cysteine or a salt thereof, it becomes possible to perform a process for converting the compound represented by general formula (2) into a compound represented by general formula (3S) in one step by allowing an enzyme or the like to act on the compound represented by general formula (2).

  根据本发明，通过采用经由一种化合物（通式（3）表示）到一种通式（6）表示的化合物的过程，可以以低成本和工业化规模进行将其转化为通式（1）表示的α-取代半胱氨酸或其盐的过程。特别是，通过采用经由一种通式（7-2）表示的化合物的过程，可以简单地去除叔丁基保护基，并以高纯度生产通式（1）表示的化合物。此外，通过采用经由叔丁基硫代甲醇或经由一种通式（9）表示的化合物的过程，可以生产通式（2）表示的化合物，而不产生致癌物质双氯甲醚。在生产α-取代-D-半胱氨酸或其盐时，可以通过允许酶或类似物作用于通式（2）表示的化合物，一步将其转化为通式（3S）表示的化合物。
• Prodrugs of Heteraromatic Compounds
  申请人：Alkermes Pharma Ireland Limited

  公开号：US20160009713A1

  公开（公告）日：2016-01-14

  The present invention relates to prodrugs of parent drug compounds containing heteroaromatic NH groups.

  本发明涉及含有杂芳基NH基团的母药化合物的前药。
• PHOTORESIST COMPOSITIONS AND METHODS
  申请人：Rohm and Haas Electronic Materials Korea Ltd.

  公开号：US20170090283A1

  公开（公告）日：2017-03-30

  New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

  提供了新的光阻剂，可用于各种应用，包括负调色剂开发过程。首选光阻剂包括第一聚合物，其中包括与聚合物骨架间隔的含有反应性氮基团的第一单元，其中氮基团在光刻处理光阻剂组合物期间产生碱性裂解产物。
• OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY
  申请人：Rohm and Haas Electronic Materials Korea Ltd.

  公开号：US20170090287A1

  公开（公告）日：2017-03-30

  Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

  提供了适合应用在光阻剂组合物上方的面漆组合物。首选的面漆组合物包括第一聚合物，其中第一单元包括与聚合物主链相距的含反应性氮基团，氮基团在光刻加工光阻剂组合物时产生碱性裂解产物。
• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND
  申请人：FUJIFILM CORPORATION

  公开号：US20160070167A1

  公开（公告）日：2016-03-10

  There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.

  提供了一种图案形成方法，包括（i）形成一种薄膜，其中包含一种感光树脂组成物，该组成物包含（A）一种特定化学式代表的化合物，（B）一种不同于化合物（A）的化合物，在接受光辐射后能够产生酸，并且（P）一种树脂，该树脂不会与从化合物（A）产生的酸发生反应，并且能够通过来自化合物（B）产生的酸的作用降低有机溶剂含有的显影剂的溶解度，（ii）曝光薄膜，（iii）使用有机溶剂含有的显影剂对曝光后的薄膜进行显影，形成负图案；上述感光树脂组成物；使用该组成物的抗蚀膜。