triethylammonium 1,1,3,3,3-pentafluoro-2-methacryloyloxypropane-1-sulfonate | 1322797-94-3

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: triethylammonium 1,1,3,3,3-pentafluoro-2-methacryloyloxypropane-1-sulfonate
• 英文别名: Triethylammonium 1,1,3,3,3-pentafluoro-2-(methacryloyloxy)propane-1-sulfonate；1,1,3,3,3-pentafluoro-2-(2-methylprop-2-enoyloxy)propane-1-sulfonate;triethylazanium
• CAS: 1322797-94-3
• 化学式: C₆H₁₅N*C₇H₇F₅O₅S
• 分子量: 399.379
• InChiKey: WFOPOIDEXSSEFF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.11
• 重原子数：
  25
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.77
• 拓扑面积：
  96.3
• 氢给体数：
  1
• 氢受体数：
  10

反应信息

• 作为反应物：
  描述：

  triethylammonium 1,1,3,3,3-pentafluoro-2-methacryloyloxypropane-1-sulfonate 生成 4-hydroxyphenyldiphenylsulfonium 1,1,3,3,3-pentafluoro-2-(methacryloyloxy)propane-1-sulfonate
  参考文献：
  名称：

  NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS

  摘要：

  本发明公开了一种由下列通式（1）表示的磺鎵盐。在该式中，X和Y分别表示具有可聚合官能团的基团；Z表示具有1至33个碳原子的二价碳氢基团，可选含有杂原子；R1表示具有1至36个碳原子的二价碳氢基团，可选含有杂原子；R2和R3分别表示具有1至30个碳原子的一价碳氢基团，可选含有杂原子，或者R2和R3可以与该式中的硫原子一起形成环。可以提供一种可用作抗蚀剂组成物的磺鎵盐，该组成物在使用高能束如ArF准分子激光、EUV光和电子束作为光源的光刻工艺中提供高分辨率和优异的LER，以及从该磺鎵盐获得的聚合物、含有该聚合物的抗蚀剂组成物和使用该抗蚀剂组成物的图案化工艺。

  公开号：

  US20110189607A1
• 作为产物：
  描述：

  甲基丙烯酸酐 、 triethylammonium 1,1,3,3,3-pentafluoro-2-hydroxypropane-1-sulfonate 在 4-二甲氨基吡啶 、 三乙胺 作用下， 以 二氯甲烷 为溶剂， 以70%的产率得到triethylammonium 1,1,3,3,3-pentafluoro-2-methacryloyloxypropane-1-sulfonate
  参考文献：
  名称：

  JP5790631

  摘要：

  公开号：

文献信息

• Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process
  申请人：Ohashi Masaki

  公开号：US08691490B2

  公开（公告）日：2014-04-08

  There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.

  本发明涉及一种由下列通式（1）所表示的磺鎵盐。在该式中，X和Y分别表示具有可聚合官能团的基团；Z表示具有1至33个碳原子的双价碳氢基团，可选含有杂原子；R1表示具有1至36个碳原子的双价碳氢基团，可选含有杂原子；R2和R3分别表示具有1至30个碳原子的单价碳氢基团，可选含有杂原子，或者R2和R3可以与该式中的硫原子结合形成环。可以提供一种可用于抗蚀剂组合物的磺鎵盐，其在使用高能光源（例如ArF准分子激光器、EUV光和电子束）进行光刻时具有高分辨率和优异的LER，还可以提供从该磺鎵盐获得的聚合物、含有该聚合物的抗蚀剂组合物以及使用该抗蚀剂组合物进行图案化的方法。
• POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20130224659A1

  公开（公告）日：2013-08-29

  A sulfonic acid anion-containing polymer having an alkylsulfonium cation not in covalent bond thereto can be readily prepared by reacting a sulfonic acid anion-containing polymer having an ammonium or metal cation with an alkylsulfonium salt under mild conditions. A resist composition comprising the inventive polymer is effective for suppressing acid diffusion since the sulfonium salt is bound to the polymer backbone. When processed by the ArF lithography, the polymer exhibits a lower absorption at the exposure wavelength than the triarylsulfonium salt form PAGs, resulting in improved resolution, mask fidelity, and LWR.

  一种含有烷基磺酸铵阳离子的聚合物，其烷基磺酸铵阳离子与聚合物主链上的其他部分不形成共价键，可以通过在温和条件下将含有铵或金属阳离子的磺酸根聚合物与烷基磺酸盐反应而容易制备。由该聚合物构成的抗蚀剂组合物对抑制酸扩散有效，因为磺酸盐与聚合物主链相结合。当通过ArF光刻工艺进行处理时，该聚合物在曝光波长处的吸收较三芳基磺酸盐形式的PAGs低，从而提高了分辨率、掩模保真度和LWR。
• Preparation of polymer, resulting polymer, resist composition, and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2631253A3

  公开（公告）日：2013-12-18

  A sulfonic acid anion--containing polymer having a triarylsulfonium cation is prepared by (1) preparing a sulfonic acid anion-containing polymer having an ammonium or metal cation not bound thereto, (2) purifying the polymer by water washing or crystallization, and (3) then reacting the polymer with a triarylsulfonium salt. A resist composition comprising the inventive polymer is effective for controlling acid diffusion since the sulfonium salt is bound to the polymer backbone.

  一种含有三芳基磺酸铵阳离子的磺酸酸根聚合物的制备方法包括：(1)制备含有未结合铵离子或金属离子的磺酸酸根聚合物，(2)通过水洗或结晶纯化聚合物，(3)然后将聚合物与三芳基磺酸盐反应。含有该聚合物的抗蚀剂组合物能有效控制酸扩散，因为磺酸盐与聚合物主链结合。
• Polymer, making method, resist composition, and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2664633A1

  公开（公告）日：2013-11-20

  A sulfonic acid anion-containing polymer having an alkylsulfonium cation not in covalent bond thereto can be readily prepared by reacting a sulfonic acid anion-containing polymer having an ammonium or metal cation with an alkylsulfonium salt under mild conditions. A resist composition comprising the inventive polymer is effective for suppressing acid diffusion since the sulfonium salt is bound to the polymer backbone. When processed by the ArF lithography, the polymer exhibits a lower absorption at the exposure wavelength than the triarylsulfonium salt form PAGs, resulting in improved resolution, mask fidelity, and LWR.

  将具有铵或金属阳离子的含磺酸阴离子聚合物与烷基锍盐在温和的条件下进行反应，可以很容易地制备出具有非共价键烷基锍阳离子的含磺酸阴离子聚合物。由于锍盐与聚合物骨架结合，因此包含本发明聚合物的抗蚀剂组合物能有效抑制酸扩散。用 ArF 光刻技术处理时，该聚合物在曝光波长处的吸收率低于三芳基锍盐形式的 PAG，从而提高了分辨率、掩模保真度和低温再生率。
• PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20130224660A1

  公开（公告）日：2013-08-29

  A sulfonic acid anion-containing polymer having a triarylsulfonium cation is prepared by (1) preparing a sulfonic acid anion-containing polymer having an ammonium or metal cation not bound thereto, (2) purifying the polymer by water washing or crystallization, and (3) then reacting the polymer with a triarylsulfonium salt. A resist composition comprising the inventive polymer is effective for controlling acid diffusion since the sulfonium salt is bound to the polymer backbone.