NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS
申请人:OHASHI Masaki
公开号:US20110189607A1
公开(公告)日:2011-08-04
There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R
1
represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R
2
and R
3
each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R
2
and R
3
may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
本发明公开了一种由下列通式(1)表示的烷基磺鎵盐。在该式中,X和Y分别表示具有可聚合官能团的基团;Z表示具有1至33个碳原子的双价碳氢基团,可选地含有一个杂原子;R1表示具有1至36个碳原子的双价碳氢基团,可选地含有一个杂原子;R2和R3分别表示具有1至30个碳原子的单价碳氢基团,可选地含有一个杂原子,或者R2和R3可以与该式中的硫原子一起形成环。可以提供一种可用作抗蚀剂组分的烷基磺鎵盐,该抗蚀剂组分在使用高能束如ArF准分子激光、EUV光和电子束作为光源的光刻工艺中,提供高分辨率和优异的LER,以及从该烷基磺鎵盐得到的聚合物、包含该聚合物的抗蚀剂组分和使用该抗蚀剂组分进行图案化处理的方法。