4-diphenylphosphoryl dibenzothiophene | 1356194-10-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-diphenylphosphoryl dibenzothiophene
• 英文别名: 4-(Diphenylphosphoryl)dibenzothiophene；4-diphenylphosphoryldibenzothiophene
• CAS: 1356194-10-9
• 化学式: C₂₄H₁₇OPS
• 分子量: 384.438
• InChiKey: UVECUHKJTGBDAZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.4
• 重原子数：
  27
• 可旋转键数：
  3
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  45.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  4-diphenylphosphoryl dibenzothiophene 在 N-溴代丁二酰亚胺(NBS) 、 四(三苯基膦)钯 、 硫酸 、 四丁基溴化铵 、 sodium hydroxide 作用下， 以 四氢呋喃 为溶剂， 反应 24.0h， 生成 2-(4-(9-(4-carbazolyl-phenyl)-9H-fluoren-9-yl)phenyl)-6-(diphenylphosphoryl)-dibenzothiophene
  参考文献：
  名称：

  四元大共轭芳香膦氧主体材料及其合成方法

  摘要：

  四元大共轭芳香膦氧主体材料及其合成方法，它涉及一种机电致发光材料及其合成方法。本材料结构如下：合成方法：一、酯的合成；二、溴代芳香膦氧化合物的合成；三、得到四元大共轭芳香膦氧主体材料。本发明器件包括衬底、阳极导电层、空穴注入层、空穴传输层a、空穴传输层b、空穴传输/电子阻挡层、发光层、电子传输层、电子注入层、阴极导电层；本发明以多功能化修饰的芳香单膦氧为主体材料制备的电致磷光器件将电致磷光器件的启亮电压降低到2.4V，具有良好的热力学稳定性和相稳定性，裂解温度为505℃～558℃，同时提高了有机电致发光材料的发光效率和亮度，本发明主要应用于有机电致磷光二极管器件中。

  公开号：

  CN103864845B
• 作为产物：
  描述：

  4-(二苯基膦)二苯并噻吩 在 双氧水 作用下， 以 二氯甲烷 为溶剂， 反应 4.0h， 以2.3 g的产率得到4-diphenylphosphoryl dibenzothiophene
  参考文献：
  名称：

  Short-Axis Substitution Approach Selectively Optimizes Electrical Properties of Dibenzothiophene-Based Phosphine Oxide Hosts

  摘要：

  Two dibenzothiophene (DBT)-based phosphine oxide hosts, named 4-diphenylphosphoryl dibenzothiophene (DBTSPO) and 4,6-bis(diphenylphosphoryl) dibenzothiophene (DBTDPO), were prepared by short-axis substitution with the aim to selectively adjust electrical properties. The combined effects of short-axis substitution and the involvement of electron-donating S atom in conjugation effectively suppress the influence of electron-withdrawing diphenylphosphine oxide (DPPO) moieties on the frontier molecular orbitals and the optical properties. Therefore, DBTSPO and DBTDPO have the nearly same hole injection ability and the excited energy levels, while more electron transporting DPPOs and the symmetrical configuration endow DBTDPO with enhanced electron-injecting/transporting ability. As the result, on the basis of this short-axis substitution effect, the selective adjustment of electrical properties was successfully realized. With the high first triplet energy level (T-1) of 290 eV, the suitable energy levels of the highest occupied molecular orbital and the lowest unoccupied molecular orbital of -6.05 and -2.50 eV and the improved carrier -transporting ability, DBTDPO supported its blue- and white emitting phosphorescent organic light emitting diodes as the best low-voltage-driving devices reported so far with the lowest driving voltages of 2.4 V for onset and <3.2 V at 1000 cd m(-2) (for indoor lighting) accompanied with the high efficiencies of >30 lm W-1 and excellent efficiency stability.

  DOI：

  10.1021/ja308273y

文献信息

• 四元大共轭芳香膦氧主体材料及其合成方法
  申请人：黑龙江大学

  公开号：CN103864845B

  公开（公告）日：2016-08-17

  四元大共轭芳香膦氧主体材料及其合成方法，它涉及一种机电致发光材料及其合成方法。本材料结构如下：合成方法：一、酯的合成；二、溴代芳香膦氧化合物的合成；三、得到四元大共轭芳香膦氧主体材料。本发明器件包括衬底、阳极导电层、空穴注入层、空穴传输层a、空穴传输层b、空穴传输/电子阻挡层、发光层、电子传输层、电子注入层、阴极导电层；本发明以多功能化修饰的芳香单膦氧为主体材料制备的电致磷光器件将电致磷光器件的启亮电压降低到2.4V，具有良好的热力学稳定性和相稳定性，裂解温度为505℃～558℃，同时提高了有机电致发光材料的发光效率和亮度，本发明主要应用于有机电致磷光二极管器件中。
• Short-Axis Substitution Approach Selectively Optimizes Electrical Properties of Dibenzothiophene-Based Phosphine Oxide Hosts
  作者：Chunmiao Han、Zhensong Zhang、Hui Xu、Shouzhen Yue、Jing Li、Pingrui Yan、Zhaopeng Deng、Yi Zhao、Pengfei Yan、Shiyong Liu

  DOI：10.1021/ja308273y

  日期：2012.11.21

  Two dibenzothiophene (DBT)-based phosphine oxide hosts, named 4-diphenylphosphoryl dibenzothiophene (DBTSPO) and 4,6-bis(diphenylphosphoryl) dibenzothiophene (DBTDPO), were prepared by short-axis substitution with the aim to selectively adjust electrical properties. The combined effects of short-axis substitution and the involvement of electron-donating S atom in conjugation effectively suppress the influence of electron-withdrawing diphenylphosphine oxide (DPPO) moieties on the frontier molecular orbitals and the optical properties. Therefore, DBTSPO and DBTDPO have the nearly same hole injection ability and the excited energy levels, while more electron transporting DPPOs and the symmetrical configuration endow DBTDPO with enhanced electron-injecting/transporting ability. As the result, on the basis of this short-axis substitution effect, the selective adjustment of electrical properties was successfully realized. With the high first triplet energy level (T-1) of 290 eV, the suitable energy levels of the highest occupied molecular orbital and the lowest unoccupied molecular orbital of -6.05 and -2.50 eV and the improved carrier -transporting ability, DBTDPO supported its blue- and white emitting phosphorescent organic light emitting diodes as the best low-voltage-driving devices reported so far with the lowest driving voltages of 2.4 V for onset and <3.2 V at 1000 cd m(-2) (for indoor lighting) accompanied with the high efficiencies of >30 lm W-1 and excellent efficiency stability.
• Dipole-Dipole Interaction Management for Efficient Blue Thermally Activated Delayed Fluorescence Diodes
  作者：Chunmiao Han、Zhen Zhang、Dongxue Ding、Hui Xu

  DOI：10.1016/j.chempr.2018.06.005

  日期：2018.9

  Thermally activated delayed fluorescence (TADF) diodes have emerged in recent years. However, blue devices still suffer from low luminance and serious efficiency roll-off, partially because of the utilization of unipolar host materials, which can suppress interaction-induced quenching at the cost of carrier flux unbalance. Herein, we demonstrate that the strong host excited-state dipole field can significantly worsen exciton quenching of blue TADF dopants through hostdopant dipole-dipole interactions. To integrate low excited-state polarity and ambipolar characteristics, we developed a donor-s-acceptor host with dramatically reduced excited-state dipole moments by one order of magnitude to only similar to 2 Debye, which gave rise to state-of-the-art external quantum efficiency beyond 20% from its devices, as well as record-low roll-off. Comparison between the device efficiencies of the hosts and various excited-state polarities revealed that the suppression of dipole-dipole interaction-induced quenching is the primary determinant of device performance for ambipolar blue TADF hosts.