bis-4-trifluoromethanesulfonyloxyphenyl-bisphenylmethane | 632336-51-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: bis-4-trifluoromethanesulfonyloxyphenyl-bisphenylmethane
• 英文别名: 4,4'-(diphenylmethylene)bis(4,1-phenylene) bis(trifluoromethanesulfonate)；4,4'-(diphenylmethylene)(bisphenyltriflate)；Bis(trifluoromethanesulfonic acid)diphenylmethylenebis(4,1-phenylene) ester；[4-[diphenyl-[4-(trifluoromethylsulfonyloxy)phenyl]methyl]phenyl] trifluoromethanesulfonate
• CAS: 632336-51-7
• 化学式: C₂₇H₁₈F₆O₆S₂
• 分子量: 616.559
• InChiKey: WWPFSJJCFQQYKR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  8.5
• 重原子数：
  41
• 可旋转键数：
  8
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.11
• 拓扑面积：
  104
• 氢给体数：
  0
• 氢受体数：
  12

反应信息

• 作为反应物：
  描述：

  bis-4-trifluoromethanesulfonyloxyphenyl-bisphenylmethane 、 4,4'-二甲基二苯胺 在 2-双环己基膦-2',6'-二甲氧基联苯 、 tris-(dibenzylideneacetone)dipalladium(0) 、 sodium t-butanolate 作用下， 以 5,5-dimethyl-1,3-cyclohexadiene 为溶剂， 反应 36.0h， 以55%的产率得到4,4'-(diphenylmethylene)bis(N,N-di-p-tolylaniline)
  参考文献：
  名称：

  使用基于二苯甲基键合的高三重态能量空穴传输材料的蓝色磷光有机发光二极管中提高的功率效率

  摘要：

  通过使用基于二苯甲基键合的新型高三重态能量空穴传输材料，证明了蓝色磷光有机发光二极管（PHOLED）的功率效率得到了提高。两种高三重态能量空穴传输材料，具有通过二苯基甲基键连接的二苯胺或二甲苯胺部分，4,4'-（二苯基亚甲基）双（N，N-二苯基苯胺）（TCBPA）和4,4'-（二苯基亚甲基）双（N （N-di-p-tolylaniline）合成并评估为蓝色PHOLED的空穴传输材料。TCBPA的功率效率优于标准的1,1-双[4- [N，N'-二（对甲苯基氨基）苯基]环己烷。

  DOI：

  10.1016/j.orgel.2012.11.004
• 作为产物：
  描述：

  三氟甲磺酸酐 、 4,4'-二苯亚甲基双酚 在 吡啶 作用下， 以91%的产率得到bis-4-trifluoromethanesulfonyloxyphenyl-bisphenylmethane
  参考文献：
  名称：

  用于有机非易失性双稳态电存储设备的新型聚合物材料的设计与合成：聚（联苯亚甲基）

  摘要：

  The synthesis of new polymers, poly(biphenylmethylene)s, derived from bistriflates of bisphenol-type monomers, by Ni(0)-mediated polymerization has been presented. These polymers are interesting because of the nature of the polymer backbone that contains biphenyl units separated by substituted methylene units. The solubility, mechanical properties, and electrical properties of the polymers can be altered

  DOI：

  10.1021/ma049572k

文献信息

• Convenient synthetic route to tetraarylphosphonium polyelectrolytes via palladium-catalyzed P-C coupling of aryl triflates and diphenylphosphine
  作者：Wang Wan、Xiaoyan Yang、Rhett C. Smith

  DOI：10.1002/pola.28564

  日期：2017.6.15

  polyelectrolytes (TPELs) has been successfully synthesized by polymerization of diphenylphosphine and bis(aryl triflate)s. The bis(aryl triflate)s are readily prepared from bisphenols, some of which are commodity feedstocks such as bisphenol A. The polymerization via palladium catalyzed P–C bond formation produces degrees of polymerization up to 65. All polymeric triflates have reasonable thermal stability in the

  通过二苯膦和双（三氟甲磺酸芳基酯）的聚合，成功地合成了一系列八种四芳基phosph聚电解质（TPEL）。双（芳基三氟甲磺酸酯）很容易从双酚制备，其中一些是商品原料，例如双酚A。通过钯催化的P–C键形成的聚合反应可产生高达65的聚合度。 350–450°C的范围。TPEL对碱性溶液的稳定性在很大程度上取决于相邻phospho位点之间的间隔基。与电子释放和笨重的取代基的聚合物对位-对鏻站点具有改善的稳定性，而那些具有吸电子取代基对-phospho位点由于通过亲核芳香族取代途径分解而降低了碱稳定性。这些发现对于碱性交换膜燃料电池和相关的电化学能量转换装置的离聚物设计具有重要的意义。©2017 Wiley Periodicals，Inc. J. Polym。科学，A部分：Polym。化学 2017年，55，1984-1990
• Composition for film formation and material for insulating film formation
  申请人：JSR CORPORATION

  公开号：US20020172652A1

  公开（公告）日：2002-11-21

  A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

  一种用于制备薄膜的组合物，能够形成具有低介电常数特性、抗开裂性、弹性模量和对基底的附着力优异的涂层膜，并可用作半导体器件中的层间绝缘膜材料等。该制膜组合物包含（A）至少一种选自芳香族聚芳烃和芳香族聚（芳烃醚）的成员，（B）聚乙烯基硅氧烷和（C）有机溶剂。
• LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1679184A1

  公开（公告）日：2006-07-12

  A laminate having a low relative dielectric constant and exhibiting excellent adhesion, a method of forming the laminate, an insulating film, a semiconductor device, and a film-forming composition are provided. A laminate according to the invention includes: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming a laminate according to the invention includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

  本发明提供了一种具有低相对介电常数并表现出优异附着力的层压板、一种形成该层压板的方法、一种绝缘膜、一种半导体器件和一种成膜组合物。 根据本发明的层压板包括：第一硅基薄膜；第二硅基薄膜；以及有机薄膜，其中第二硅基薄膜包括含有碳碳双键或碳碳三键的一价有机基团。 根据本发明形成层压板的方法包括：在基底上形成第一硅基薄膜的第一涂层；在第一涂层上形成第二硅基薄膜的第二涂层，第二涂层包括含有碳碳双键或碳碳三键的一价有机基团；在第二涂层上形成有机薄膜的第三涂层；以及固化包括第一至第三涂层的多层薄膜。
• INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1696478A1

  公开（公告）日：2006-08-30

  The invention provides a method of forming an insulating film which exhibits resistance against processing such as RIE used when forming a dual-damascene structure while maintaining a low relative dielectric constant of a polysiloxane insulating film. A polysiloxane insulating film is formed on a substrate by hydrolysis and condensation of a silane compound. A solution obtained by dissolving a polycarbosilane compound shown by the following general formula in a solvent is applied to the polysiloxane insulating film, and the resulting coating is heated to form a polycarbosilane insulating film. An organic insulating film is then formed on the polycarbosilane insulating film.

  本发明提供了一种形成绝缘膜的方法，这种绝缘膜既能抵抗在形成双大马士革结构时使用的 RIE 等加工，又能保持聚硅氧烷绝缘膜较低的相对介电常数。聚硅氧烷绝缘膜是通过硅烷化合物的水解和缩合作用在基材上形成的。将下表通式所示的聚碳硅烷化合物溶解在溶剂中得到的溶液涂抹在聚硅氧烷绝缘膜上，然后加热涂层，形成聚碳硅烷绝缘膜。 然后在聚碳硅烷绝缘膜上形成有机绝缘膜。
• Stacked film, insulating film and substrate for semiconductor
  申请人：JSR CORPORATION

  公开号：US20030077461A1

  公开（公告）日：2003-04-24

  A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.

  本发明公开了一种在半导体器件等中与通过 CVD 工艺形成的涂膜具有优异附着力的半导体用叠层膜、具有该叠层膜的绝缘膜以及使用该绝缘膜的半导体用基板。叠层膜包括(A)碳含量大于等于 60%（重量百分比）的有机化合物膜和(B)通过加热至少一种选自上述通式(51)至(54)所代表的特定化合物的水解缩合物而制备的膜。