METAL-POLISHING COMPOSITION AND CHEMICAL MECHANICAL POLISHING METHOD BY USING THE SAME
申请人:KATO Tomoo
公开号:US20080188079A1
公开(公告)日:2008-08-07
The present invention provides a metal-polishing composition for use in chemical mechanical polishing of semiconductor devices, comprising:
(a) a compound represented by the following Formula A, (b) a compound represented by the following Formula B, (c) an abrasive grain, and (d) an oxidizing agent:
in Formula A, R
1
represents an alkyl group having 1 to 3 carbon atoms; and R
2
represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and in Formula B, R
3
, R
4
, and R
5
each independently represent a hydrogen atom, or an alkyl, aryl, alkoxy, amino, aminoalkyl, hydroxy, hydroxyalkyl, carboxy, carboxyalkyl or carbamoyl group.