There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure:
1
wherein R
1
, R
2
, R
3
and R
5
are each a hydrogen atom or a methyl group; R
4
is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R
6
is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0
本发明公开了一种用于使用220纳米或更短波长的光进行光刻的光阻材料,其包括至少一种由以下式(2)表示的聚合物和用于通过曝光产���酸的光酸发生剂:
其中,R1、R2、R3和R5分别为氢原子或甲基基团;R4为酸可裂解基团、具有7至13个碳原子的脂环烃基团,其具有酸可裂解基团、具有7至13个碳原子的脂环烃基团,其具有羧基,或具有3至13个碳原子的烃基团,其具有环氧基团;R6为氢原子、具有1至12个碳原子的烃基团,或具有7至13个碳原子的脂环烃基团,其具有羧基;x、y和z是可选的值,满足x+y+z=1,0≤x≤1,0≤y<1和0≤z<1;聚合物的重均分子量在2000至200000范围内,以及具有由式(3)表示的脂环内酯结构的(甲)丙烯酸酯单元的树脂:
其中,R8为氢原子或甲基基团,R9为具有脂环内酯结构的7至16个碳原子的烃基团。