2,3,5,6-tetramethylmorpholine | 60849-61-8

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 恶嗪烷类
• 英文名称: 2,3,5,6-tetramethylmorpholine
• 英文别名: β2-2,3,5,6-Tetramethylmorpholin；γ-2,3,5,6-Tetramethylmorpholin；ε-2,3,5,6-Tetramethylmorpholin；2,3,5,6-Tetramethylmorpholin；β1-2,3,5,6-Tetramethylmorpholin；α-2,3,5,6-Tetramethylmorpholin；δ-2,3,5,6-Tetramethylmorpholin
• CAS: 60849-61-8
• 化学式: C₈H₁₇NO
• mdl: MFCD19221884
• 分子量: 143.229
• InChiKey: LBENNTMCSDHVJB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.2
• 重原子数：
  10
• 可旋转键数：
  0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  21.3
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2,3,5,6-tetramethylmorpholine 生成 β2-N-(3,4,5-Trimethoxybenzoyl)-2,3,5,6-tetramethylmorpholin
  参考文献：
  名称：

  HERNESTAM S.; STENVALL G., J. HETEROCYCL. CHEM. , 1976, 13, NO 4, 733-739

  摘要：

  DOI：
• 作为产物：
  描述：

  3,3'-iminobis-2-butanol 以42%的产率得到
  参考文献：
  名称：

  HERNESTAM S.; STENVALL G., J. HETEROCYCL. CHEM. , 1976, 13, NO 4, 733-739

  摘要：

  DOI：

文献信息

• PHOTOBASE GENERATOR
  申请人：Kuramoto Ayako

  公开号：US20110233048A1

  公开（公告）日：2011-09-29

  There is intended to provide the novel compounds which generate a base easily when irradiated with long wavelength light (active energy rays), a photobase generator containing the compounds and a photobase generation method, and the present invention relates to the compounds represented by the general formula [1], a photobase generator containing the compounds and a photobase generation method: (wherein, Ar represents any of groups with specific structures selected from the group consisting of an anthracenyl group, an anthraquinonyl group and a pyrenyl group; R 1 and R 2 each independently represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or represent ones which can form an alicyclic ring containing nitrogen atom(s) or an aromatic ring containing nitrogen atom(s) together with a nitrogen atom to which they are bound, which the rings having 3 to 8 carbon atoms which may have a substituent, R 3 and R 4 each independently represent a hydrogen atom, a linear, branched or acyclic alkyl group having 1 to 10 carbon atoms).

  本发明旨在提供当受长波长光（活性能量射线）照射时易于产生碱的新化合物，包含这些化合物的光碱发生器以及光碱生成方法，本发明涉及由通式[1]表示的化合物，包含这些化合物的光碱发生器以及光碱生成方法：（其中，Ar代表从蒽基团、蒽醌基团和芘基团中选择的具有特定结构的任何基团；R1和R2各自独立地代表氢原子或具有1至10个碳原子的直链、支链或环烷基基团，或表示能够与它们结合的氮原子形成含氮原子的脂环烷基环或含氮原子的芳香环，这些环具有3至8个碳原子，可能有取代基；R3和R4各自独立地代表氢原子，具有1至10个碳原子的直链、支链或非环烷基基团）。
• GAMMA SECRETASE MODULATORS
  申请人：Huang Xianhai

  公开号：US20100137320A1

  公开（公告）日：2010-06-03

  This invention provides novel compounds that are modulators of gamma secretase. The compounds have the formula Also disclosed are methods of modulating gamma secretase activity and methods of treating Alzheimer's Disease using the compounds of formula (I).

  本发明提供了一种新型的化合物，它们是γ-分泌酶的调节剂。这些化合物的化学式如下：（见原文） 此外，本发明还揭示了调节γ-分泌酶活性的方法以及使用化合物（I）治疗阿尔茨海默病的方法。
• Process for removing COS from a gas or liquid stream
  申请人：THE DOW CHEMICAL COMPANY

  公开号：EP0008449A1

  公开（公告）日：1980-03-05

  The hydrolysis of carbonyl sulfide (COS) in a gas or liquid stream is catalyzed by morpholines and piperazines at a temperature in the range from 50°C to 90°C. The process can be used in the treatment of refinery gases, coal gasification streams, and other such gases as well as liquid hydrocarbons which contain COS and other acidic contaminants.

  在 50°C 至 90°C 的温度范围内，通过吗啉和哌嗪催化气流或液流中的硫化羰基（COS）水解。该工艺可用于处理炼油厂气体、煤气化气流、其他此类气体以及含有 COS 和其他酸性污染物的液态碳氢化合物。
• COMPOSITION FOR WATER-REPELLENT TREATMENT OF SURFACE, AND METHOD FOR WATER-REPELLENT TREATMENT OF SURFACE OF SEMICONDUCTOR SUBSTRATE USING SAME
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2615633A1

  公开（公告）日：2013-07-17

  The purpose of the present invention to provide: a composition which can be used for water-repellent treating of the entire surface of a semiconductor substrate having a pattern formed by laminating a Si-containing insulating layer and a metal layer, at one time; and a method for water-repellent treatment of the semiconductor substrate surface using the composition. The present invention relates to: (1) a composition for water-repellent treatment of a semiconductor substrate surface comprising a) at least one kind of a compound selected from the group consisting of a long-chain alkyl tertiary amine and a long-chain alkyl ammonium salt, b) a base or an acid generating agent, having a condensed ring structure or forming a condensed ring structure by generating a base or an acid and c) a polar organic solvent, and (2) a method for water-repellent treatment of the semiconductor substrate surface having the pattern formed by laminating the Si-containing insulating layer and the metal layer, using the composition.

  本发明的目的是：提供一种组合物，该组合物可用于一次性对具有通过层叠含硅绝缘层和金属层而形成的图案的半导体衬底的整个表面进行憎水处理；以及一种使用该组合物对半导体衬底表面进行憎水处理的方法。 本发明涉及(1) 一种用于对半导体衬底表面进行憎水处理的组合物，该组合物包含 a) 至少一种选自由长链烷基叔胺和长链烷基铵盐组成的组的化合物；b) 碱或酸生成剂、(2) 使用该组合物对具有通过层压含硅绝缘层和金属层而形成的图案的半导体衬底表面进行憎水处理的方法。
• HERNESTAM S.; STENVALL G., J. HETEROCYCL. CHEM., 1980, 17, NO 8, 1751-1756
  作者：HERNESTAM S.、 STENVALL G.

  DOI：——

  日期：——