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(2E,5Z)-hepta-2,5-dienoic acid

中文名称
——
中文别名
——
英文名称
(2E,5Z)-hepta-2,5-dienoic acid
英文别名
——
(2E,5Z)-hepta-2,5-dienoic acid化学式
CAS
——
化学式
C7H10O2
mdl
——
分子量
126.15
InChiKey
SODMOUXEPOJRRF-NDEAWQBTSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.6
  • 重原子数:
    9
  • 可旋转键数:
    3
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.29
  • 拓扑面积:
    37.3
  • 氢给体数:
    1
  • 氢受体数:
    2

反应信息

  • 作为反应物:
    描述:
    (2E,5Z)-hepta-2,5-dienoic acid 生成 (2R,3S)-3-[[(2R,3S)-3-methyloxiran-2-yl]methyl]oxirane-2-carboxylic acid
    参考文献:
    名称:
    PARRY, RONALD J.;TURAKHIA, RAJESH;BUU, HANH PHUOC, J. AMER. CHEM. SOC., 110,(1988) N 12, 4035-4036
    摘要:
    DOI:
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文献信息

  • PARRY, RONALD J.;TURAKHIA, RAJESH;BUU, HANH PHUOC, J. AMER. CHEM. SOC., 110,(1988) N 12, 4035-4036
    作者:PARRY, RONALD J.、TURAKHIA, RAJESH、BUU, HANH PHUOC
    DOI:——
    日期:——
  • CLEANING COMPOSITIONS AND METHODS OF USE THEREOF
    申请人:Fujifilm Electronic Materials U.S.A., Inc.
    公开号:US20210292685A1
    公开(公告)日:2021-09-23
    The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.
  • [EN] CLEANING COMPOSITIONS AND METHODS OF USE THEREOF<br/>[FR] COMPOSITIONS DE NETTOYAGE ET LEURS PROCÉDÉS D'UTILISATION
    申请人:FUJIFILM ELECTRONIC MAT USA INC
    公开号:WO2021188766A1
    公开(公告)日:2021-09-23
    The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.
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